Taiwan Semiconductor Manufacturing Comp. Ltd.

Jiun Ren Lai

Chen-Hua Douglas Yu

Jing-Cheng Lin

Ming-Fa Chen

Hsien-Pin Hu

Yung-Chi Lin

A device includes an interposer, which includes a substrate having a top surface. An interconnect structure is formed over the top surface of the substrate, wherein the interconnect structure includes at least one dielectric layer, and metal features in the at least one dielectric layer. A plurality of through-substrate vias (TSVs) is in the substrate and electrically coupled to the interconnect structure. A first die is over and bonded onto the interposer. A second die is bonded onto the interposer, wherein the second die is under the interconnect structure.

Method for forming a semiconductor device including forming a first interconnect structure on one side of a substrate having first metal feature closer the substrate than second metal feature and forming first and second tsv on other side of substrate connecting to the metal features

Method for forming a semiconductor device having TSV formed through a silicon interposer and a second silicon substrate with cavity covering a second die

Method for forming a 3D IC architecture including forming a first die on a first side of a first interconnect structure and a second die in an opening formed in a second side

3D IC architecture with interposer and interconnect structure for bonding dies

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Zhubei, Taiwan

Jiun Ren Lai