Taiwan Semiconductor Manufacturing Comp. Ltd.

Jiun Nan Chen

Shieh Feng Huang

Lien Yo Tsai

Yuh-Hwa Chang

Jiann Tyng Tzeng

A method for forming a split-gate flash memory structure includes etching a first gate layer to form one or more floating gates and forming an isolation layer over the floating gates. An insulation layer is deposited over the isolation layer and planarized.

System and method of forming a split-gate flash memory structure including partial circular sidewalls of the floating gates and control gates

System and method of forming a split-gate flash memory structure

A double substrate spatial light modulator with an enlarged tilt angle is achieved. The device comprises a mirror attached on one end to a hinge wherein the hinge is attached to support posts adjacent to the mirror and attached to an underlying glass substrate, a trench within the glass substrate adjacent to the support posts wherein the mirror tilts upward from the glass substrate and downward into the trench, and an overlying glass substrate. The trench provides an enlarged tilt angle of mirror motion. This improves optical performance of the mirror projector including contrast ratio and gray scale.

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Taipei, Taiwan

Jiun Nan Chen