Apple Inc.

Jiun-Jye Chang

Shinya Ono

Ching-Sang Chuang

Chin-Wei Lin

Jung Yen Huang

Po-Chun Yeh

Shih Chang Chang

Ting-Kuo Chang

Lei Yuan

Doh-Hyoung Lee

Niva A Ran

Chuan-Jung Lin

Themistoklis Afentakis

Caleb Coburn

Chieh-Wei Chen

Kyung Wook Kim

Hao-Lin Chiu

Kwang Soon Park

Chia-Yu Chen

Shang-Chih Lin

Gihoon Choo

Takahide Ishii

Hassan Edrees

Zino Lee

Yu-Wen Liu

Gwanwoo Park

Chih Pang Chang

Akira Matsudaira

Keisuke Omoto

Wen-I Hsieh

Jiaxi Hu

Chih-Hung Yu

Xingfeng He

Yung Fong Kao

Shih Lun Huang

Cheng Min Hu

Suhwan Moon

Dong-Gwang Ha

An organic light-emitting diode (OLED) display may have an array of organic light-emitting diode pixels that each have OLED layers interposed between a cathode and an anode. Voltage may be applied to the anode of each pixel to control the magnitude of emitted light. The conductivity of the OLED layers may allow leakage current to pass between neighboring anodes in the display. To reduce leakage current and the accompanying cross-talk, the display may include active and/or passive leakage-mitigating structures. The passive leakage-mitigating structures may have an undercut that causes discontinuities in the overlying OLED layers. Active leakage-mitigating structures may include a conductive layer (e.g., a conductive ring) that drains leakage current to ground. Alternatively, the active leakage-mitigating structures may include a gate electrode modulator with a variable voltage that stops the current flow laterally.

Organic light-emitting diode display with passive leakage-reducing structures

An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels, that include hybrid thin-film transistor structures formed using semiconducting-oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. A drive transistor in the display pixel may be a top-gate semiconducting-oxide thin-film transistor and a switching transistor in the display pixel may be a top-gate silicon thin-film transistor. A storage capacitor in the display may include a conductive semiconducting-oxide electrode.

Displays with silicon and semiconducting-oxide top-gate thin-film transistors

A display may include an array of pixels. Each pixel in the array includes an organic light-emitting diode coupled to associated semiconducting oxide transistors. The semiconducting oxide transistors may exhibit different device characteristics. Some of the semiconducting oxide transistors may be formed using a first oxide layer formed from a first semiconducting oxide material using first processing steps, whereas other semiconducting oxide transistors are formed using a second oxide layer formed from a second semiconducting oxide material using second processing steps different than the first processing steps. The display may include three or more different semiconducting oxide layers formed during different processing steps.

Display circuitry with semiconducting oxide transistors

An electronic device may have a display with touch sensors. One or more shielding layers may be interposed between the display and the touch sensors. The display may include transistors with gate conductors, a first planarization layer formed over the gate conductors, one or more contacts formed in a first source-drain layer within the first planarization layer, a second planarization layer formed on the first planarization layer, one or more data lines formed in a second source-drain layer within the second planarization layer, a third planarization layer formed on the second planarization layer, and a data line shielding structure formed at least partly in a third source-drain layer within the third planarization layer. The data line shielding structure may be a routing line, a blanket layer, a mesh layer formed in one or more metal layers, and/or a data line covering another data line.

Data line shielding for electronic device displays with touch sensors

Organic light-emitting diode display with active leakage-reducing structures

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Cupertino, CA, United States of America

Jiun-Jye Chang