International Business Machines Corporation

Jiun-Hsin Liao

David Michael Fried

Ishtiaq Ahsan

Lidor Goren

A test structure for testing transistor gate structures in an IC device includes one or more probe pads formed at an active area of the IC device; one or more first conductive lines formed at the active area of the IC device, in electrical contact with the one or more probe pads; one or more second conductive lines formed at a gate conductor level of the IC device, in electrical contact with the one or more first conductive lines; and a gate electrode structure to be tested in electrical contact with the one or more second conductive lines; wherein the electrical contact between the one or more second conductive lines and the one or more first conductive lines is facilitated by a localized dielectric breakdown of a gate dielectric material disposed between the one or more second conductive lines and the one or more first conductive lines.

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Wappingers Falls, NY, United States of America

Jiun-Hsin Liao