Samsung Electronics Co., Ltd.

Jitsuo Ota

Jihoon Kang

Myunghee Kim

Jenghun Suh

Jaephil Shim

Sungtae Kim

Jinhee Kang

Shunsuke Kimura

Yongdok Cha

The disclosure relates to a light emitting diode (LED) that is capable of emitting a plurality of lights having different wavelengths from one another, and independently controlling the intensity of the plurality of emitted lights and a manufacturing method of the LED, and a display device including the LED. Specifically, an LED according to the disclosure includes a first light emitting cell including an n-type semiconductor layer, a p-type semiconductor layer, and a first light emitting layer which respectively include at least one non-planar area, the first light emitting layer emitting a light of a first wavelength, a second light emitting cell including an n-type semiconductor layer, a p-type semiconductor layer, and a second light emitting layer which respectively consist of a planar area, the second light emitting layer emitting a light of a second wavelength different from the first wavelength of the light emitted from the first light emitting layer, a common electrode commonly connected with the first light emitting cell and the second light emitting cell, and a first pixel electrode and a second pixel electrode independently connected with each of the first light emitting cell and the second light emitting cell.

Light emitting diode, manufacturing method of light emitting diode and display device including light emitting diode

A display panel including an LED device and a method including: forming a plurality of light emitting diodes (LEDs); and forming a plurality of partition walls that divide light-emitting regions by each of the plurality of LEDs, wherein the forming the plurality of LEDs includes: etching a growth substrate to form a plurality of LEDs and forming a plurality of protrusions and a plurality of depressions on the growth substrate; and forming a reflector layer on a surface of the plurality of protrusions and a surface of the plurality of depressions, and wherein the forming the plurality of partition walls includes removing a part of the growth substrate so that the plurality of partition walls are formed based on the plurality of protrusions, and a space between the plurality of partition walls is formed based on the plurality of depressions.

LED display module, manufacturing method for LED display module and display device including LED display module

A light emitting element, a manufacturing method therefor, and a display device including the light emitting element are disclosed. Particularly, disclosed are a multi-tunnel junction light emitting element having two or more light emitting regions, which are horizontally separated from each other, and a manufacturing method therefor, and disclosed is a display device which includes the light emitting element so as to efficiently arrange pixels and independently control the light emitting regions.

Light emitting element, light emitting element manufacturing method, and display device including light emitting element

An LED device includes: a first semiconductor layer of a first type; a second semiconductor layer of a second type; a light emitting layer formed between the first semiconductor layer and the second semiconductor layer and configured to emit light; and a filter formed on the second semiconductor layer and configured to transmit light in the second wavelength band within the first wavelength band. The filter includes a defect layer, first refractive layers, and second refractive layers having a refractive index greater than a refractive index of the first refractive layers, the first refractive layers and the second refractive layers are formed alternately on one side and other side of the defect layer. A thickness of the defect layer is determined based on a center wavelength of the first wavelength band, a peak wavelength of the second wavelength band and a refractive index of the defect layer.

Light emitting diode device having multilayer filter for improving color characteristic of light

An LED, a manufacturing method thereof, and a display device including an LED are provided. Specifically, the disclosure relates to a flip-chip LED with high efficiency including a current confinement structure and a manufacturing method thereof, and a display device including such an LED. In particular, a flip-chip LED according to the disclosure includes a resistive area that surrounds a light-emitting layer and restricts current flow from the light emitting layer to the sidewalls.

Light emitting diode with ion implanted resistive area, manufacturing method of light emitting diode with ion implanted resistive area and display device including light emitting diode with ion implanted resistive area

Growing community of inventors

Suwon-si, South Korea

Jitsuo Ota