International Business Machines Corporation

Jitendra Singh Rathore

Alshakim Nelson

Robert Dennis Miller

Qinghuang Lin

Ratnam Sooriyakumaran

Phillip Joe Brock

Blake W Davis

Dirk Pfeiffer

Satyanarayana Venkata Nitta

Robert L Bruce

Linda Karin Sundberg

Luisa Dominica Bozano

Qiu Dai

Krishna S Bajjuri

An interconnect structure includes a patterned and cured dielectric layer located directly on a surface of a patterned permanent antireflective coating. The patterned and cured dielectric layer and the permanent antireflective coating form shaped openings. The shaped openings include an inverse profile which narrows towards a top of the shaped openings. A conductive structure fills the shaped openings wherein the patterned and cured dielectric layer and the permanent antireflective coating each have a conductively filled region.

Interconnect structure and method for fabricating on-chip interconnect structures by image reversal

Silsesquioxane polymers that cure to porous silsesquioxane polymers, silsesquioxane polymers that cure to porous silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers that cure to porous silsesquioxane polymers, structures containing porous silsesquioxane polymers and monomers and method of preparing monomers for silsesquioxane polymers that cure to porous silsesquioxane polymers.

Photo-patternable dielectric materials curable to porous dielectric materials, formulations, precursors and methods of use thereof

Provided are inorganic-organic block copolymers that self assemble without the addition of a precursor. The inorganic block of the polymers includes silicon and the organic block may be any organic polymer. The inorganic-organic block copolymers self assemble to form a material in which the inorganic polymer block may be crosslinked to produce an organosilicate and/or silica matrix, and further thermal curing of the matrix results in the formation of a porous nanostructured film.

Nanostructured organosilicates from thermally curable block copolymers

The present invention provides chemically amplified silsesquioxane polymers for preparing masks using e-beam lithography. The silsesquioxane polymers have reactive sidechains that in the presence of an acid undergo acid catalyzed rearrangement to generate reactive functionalities that crosslink to form Si&#x2014;O&#x2014;Si bonds. The reactive side-chains comprise &#x3b2;- and &#x3b3;-substituted alkyl groups bound to the silicon of the silsesquioxane polymer. The substituent of the &#x3b2;- and &#x3b3;-substituted alkyl group is an electron withdrawing group. Resists generated with the chemically amplified silsesquioxane polymers of the present invention and imaged with e-beams have resolution of &#x2266;60 nm line/space.

Chemically amplified silsesquioxane resist compositions

Growing community of inventors

Campbell, CA, United States of America

Jitendra Singh Rathore