Cvd, Incorporated

Rohm & Haas Electronic Materials LLC

Shipley Company LLC

Rohm and Haas Company

Dow Global Technolgoies LLC

Other

Morton International, Inc.

Rohm and Haas Electronic Materials Korea Ltd.

Tokai Carbon Company, Ltd.

Jitendra Singh Goela

Michael A Pickering

Nathaniel E Brese

Lee E Burns

Raymond L Taylor

Zlatko X Salihbegovic

Hangyao Wang

Hua Bai

Heather A G Stern

Mark Lefebvre

Neil D Brown

James T Fahey

Angelo B Chirafisi

Melinda S Strickland

Jamie L Triba

Mitch Boudreaux

Debashis Chakraborty

James C MacDonald

Alexander Teverovsky

Vincent DiFilippo

Lee Erich Burns

Joseph T Keeley

Roy D Jaworski

Thomas Payne

Nathaniel Brese

Heather AG Stern

Low scatter water clear zinc sulfide with reduced metal contamination is prepared by cleaning an inert foil with an acid cleaning method and also cleaning zinc sulfide to reduce metal contamination. The zinc sulfide is wrapped in the inert foil and then treated by a HIP process to provide a water-clear zinc sulfide. The low scatter water-clear zinc sulfide may be used in articles such as windows and domes.

Quality multi-spectral zinc sulfide

Articles with graphene are selectively transparent to electromagnetic radiation. The articles transmit electromagnetic radiation in the infrared and visible light bands while inhibiting incident radio frequency radiation. The articles have high electrical conductivity and may be used in windows and domes.

Transparent conductive articles

The hardness of zinc sulfide is increased by adding selective elements within a specified range to the crystal lattice of the zinc sulfide. The increased hardness over conventional zinc sulfide does not substantially compromise the optical properties of the zinc sulfide. The zinc sulfide may be used as a protective coating for windows and domes.

Increasing zinc sulfide hardness

A method is directed to increasing the hardness of zinc sulfide. The hardness of zinc sulfide is increased by adding selective elements within a specified range to the crystal lattice of the zinc sulfide. The increased hardness over conventional zinc sulfide does not substantially compromise the optical properties of the zinc sulfide. The zinc sulfide may be used as a protective coating for windows and domes.

Method of increasing zinc sulfide hardness

Semiconductor processing and equipment are disclosed. The semiconductor equipment and processing provide semiconductor wafers with reduced defects.

Semiconductor processing

Optical articles of zinc sulfide and zinc selenide with thick coatings of alumina are disclosed. The alumina coatings are deposited on the zinc sulfide and zinc selenide by a microwave assisted magnetron sputtering. In addition to alumina coatings, the optical articles may also include various polymer coatings.

Method of making durable articles

Low scatter water clear zinc sulfide with reduced metal contamination is prepared by coating a chuck which holds zinc sulfide and machining the zinc sulfide with uncoated particles. An inert foil is cleaned with an acid cleaning method and also cleaning the zinc sulfide. The zinc sulfide is wrapped in the inert foil and then treated by a HIP process to provide a low scatter water-clear zinc sulfide. The low scatter water-clear zinc sulfide may be used in articles such as windows and domes.

Methods of making polycrystalline monolithic magnesium aluminate spinels are disclosed. The polycrystalline monolithic magnesium aluminate spinels have small grain sizes and may be deposited on substrates as thick one-piece deposits. The polycrystalline monolithic magnesium aluminate spinels may be prepared and deposited by chemical vapor deposition using magnesium and aluminum gaseous precursors.

Method of making polycrystalline monolithic magnesium aluminate spinels

An optical article and method of making the same are provided. The optical article has optical multi-aperture operation. The optical article has one or more electrically conductive and selectively passivated patterns.

Article having electrically conductive and selectively passivated patterns

An apparatus includes a manifold with a chamber for mixing multiple reactants. Gases are jetted into the manifold by a plurality of inlet injectors. The inlet injectors are arranged such that the gases passing into the manifold impinge on each other at a common point to form a mixture. The mixture passes through a plurality of holes in one side of the manifold into a deposition chamber where the mixture of gases impinges on additional gases at a common point to provide a reaction resulting in deposition of solid materials in the deposition chamber. The solid materials are free-standing.

Apparatus and method for producing free-standing materials

An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.

Opaque low resistivity silicon carbide

Optical article

Polycrystalline monolithic magnesium aluminate spinels are disclosed. The polycrystalline monolithic magnesium aluminate spinels have small grain sizes and may be deposited on substrates as thick one-piece deposits. The polycrystalline monolithic magnesium aluminate spinels may be prepared and deposited by chemical vapor deposition. Articles made with the polycrystalline monolithic magnesium aluminate spinels also are disclosed.

Growing community of inventors

Andover, MA, United States of America

Jitendra Singh Goela