Samsung Electronics Co., Ltd.

Korea Food Research Institute

Jisu Kang

Taewook Park

Sungmin Kim

Jaehyun Park

So-Young Lee

Heonjong Shin

Yuri Lee

Yongki Lee

Eunhye Oh

Jonghoon Shin

Jaehyeok Kim

Yong-Soo Park

Hee Soon Shin

Young-Do Nam

Yun-Tai Kim

Hyunil Kim

Hongmook Choi

Hyesoo Lee

Won-Hyong Chung

Mi Young Lim

Ji-Hee Shin

Seungpyo Hong

An operation method of a memory device includes programming a test pattern in a normal area, obtaining locations of error bits with respect to the test pattern and an error count for each error bit location, and repairing faulty cells included in the normal area with redundancy cells in a redundancy area based on the locations of the error bits and the error counts.

Operating and testing semiconductor devices

A clock generating circuit includes an oscillator, a clock counter, a finite state machine, and a non-volatile memory. The oscillator outputs an oscillator clock signal having a period based on a trim value. The clock counter counts the oscillator clock signal for a reference time. The finite state machine obtains the count value of the counted oscillator clock signal from the clock counter, and in a test mode, compares the count value with a target count value and changes the trim value based on the comparison result and determines a final trim value based on the changed trim value. The non-volatile memory stores the final trim value that is determined.

Clock generating circuit and method for trimming period of oscillator clock signal

Provided is a storage device including a memory device configured to store original data; and a controller configured to control the memory device, the controller including a first error correction circuit configured to correct an error of the original data, and a second error correction circuit configured to correct an error of the original data, a maximum number of correctable error bits of the second error correction circuit being greater than a maximum number of correctable error bits of the first error correction circuit, a mapping memory configured to store at least some of parity bits generated by the second error correction circuit and store an address of the memory device at which the original data is stored; and a control block configured to control the first error correction circuit, the second error correction circuit, and the mapping memory.

Storage device including mapping memory and method of operating the same

A security circuit includes a decoder configured to receive input data and output a decoding signal in response to the input data, a first encoder configured to output one of first phenotypes corresponding to any one among integers in N-decimal (N is a natural number of 1 or more) as a first encoding value in response to the decoding signal, a second encoder configured to output one of second phenotypes corresponding to any one among integers in N-decimal as a second encoding value in response to the decoding signal, and a gate module circuit configured to generate output data by performing a logic operation on the first encoding value and the second encoding value.

Security circuit including dual encoder and endecryptor including the security circuit

A semiconductor device includes a first active region and a second active region, which are disposed in a semiconductor substrate and have side surfaces facing each other, an isolation pattern disposed between the first and second active regions, a semiconductor extension layer disposed between the first and second active regions, a first source/drain semiconductor layer disposed on the first active region, and a second source/drain semiconductor layer disposed on the second active region. The facing side surfaces of the first and second active regions are closer to the semiconductor extension layer than the isolation pattern.

Semicondcutor device including a semiconductor extension layer between active regions

Semiconductor device including a semiconductor extension layer between active regions

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Seoul, South Korea

Jisu Kang