Hanwha Chemical Corporation

Other

Rftron Co., Ltd.

Inoonep Inc.

Innonep Inc.

Jisoon Ihm

Dong Ok Kim

Dong Wook Kim

Gui Ryong Ahn

Hyo Jin Jeon

Jong Sik Kim

Moon-Hyun Cha

Hee Bock Yoon

Jeasung Park

Seok Hwan Park

Jaesung Park

Kookrin Char

Provided is a method of preparing a sparsely pillared organic-inorganic hybrid compound. The method of preparing an organic-inorganic hybrid compound includes: preparing a compound having a gibbsite structure by a method other than a hydrothermal synthesis method, using a trivalent metal cation source, an alkali imparting agent, and a first solvent (S10); and preparing an organic-inorganic hybrid compound by a method other than a hydrothermal synthesis method, using the compound of the gibbsite structure, a divalent metal cation source, dicarboxylic acid, and a second solvent (S20).

Method of preparing sparsely pillared organic-inorganic hybrid compound

A sparsely pillared organic-inorganic hybrid compound is provided. The sparsely pillared organic-inorganic hybrid compound includes: two inorganic material layers, each extending in one direction and facing each other; and an organic material layer disposed between the two inorganic material layers, wherein each of the inorganic material layers has a gibbsite structure in which a divalent metal cation is doped to an octahedral site, and the organic material layer includes a plurality of pillar portions, each of which is chemically bound to each of the two inorganic material layers such that the two inorganic material layers are connected to each other.

Sparsely pillared organic-inorganic hybrid compound

The present invention relates to a transparent compound semiconductor and to a production method therefor, and is adapted to provide a transparent compound semiconductor of high stability and charge mobility while being transparent. The transparent compound semiconductor according to the present invention has a composition of BaLaSnO(0&#x3c;x&#x3c;0.1) and has a charge mobility of at least 10 cm/V&#xb7;sec.

Transparent compound semiconductor and production method therefor

The present invention relates to a more advanced preparation method of organic-transition metal hydride as a hydrogen storage material, precisely a more advanced preparation method of organic-transition metal hydride containing aryl or alkyl group that facilitates safe and reverse storage of massive amount of hydrogen. The present invention relates to a preparation method of an organic-transition metal hydride comprising the steps of preparing a complex reducing agent composition by reacting alkali metal, alkali earth metal or a mixture thereof and (C10-C20) aromatic compound in aprotic polar solvent and preparing organic-transition metal hydride by reacting the prepared complex reducing agent composition and organic transition metal halide. The method of the present invention has advantages of minimizing the numbers and the amounts of byproducts by using a complex reducing agent and producing organic-transition metal hydride safely without denaturation under more moderate reaction conditions.

More advanced preparation method of organic-transition metal hydride complexes containing aryl group or alkyl group as hydrogen storage materials

The present invention relates to substances which can be applied to the technical fields of gas storages, polymerization catalysts and optical isomers, their intermediates, and processes for preparing the same, which is characterized in that 1) possible disintegration of structure of the scaffold material (SM) is impeded, and 2) they are prepared by a simple manufacturing system as compared to the substances conventionally suggested in the application field. Specifically, it relates to scaffold material-transition metal hydride complexes comprised of scaffold material (SM) and transition metal hydride (MH) which is chemically bonded to the functional groups formed on the scaffold material, SM-transition metal halide complex and SM-transition metal ligand complex as the precursors, and a process for preparing the same. The SM-transition metal hydride complex according to the present invention is a substance for hydrogen storage which adsorbs hydrogen via Kubas adsorption. The complex according to the invention can store high capacity of hydrogen with safety and reversibility, while disintegration of its structure does not occur even with repeated adsorption-desorption of hydrogen.

Scaffold materials-transition metal hydride complexes, intermediates therefor and method for preparing the same

The present invention relates to an improved preparation method of an organic-transition metal hydride as a hydrogen storage material, especially an improved preparation method of an organic-transition metal hydride containing aryl or alkyl group that facilitates safe and reversible storage of a massive amount of hydrogen. The present invention also relates to a preparation method of an organic-transition metal hydride comprising the steps of: preparing a complex reducing agent composition by reacting alkali metal, alkali earth metal or a mixture thereof and a C10 to C20 aromatic compound in aprotic polar solvent; and preparing the organic-transition metal hydride by reacting the prepared complex reducing agent composition with an organic-transition metal halide in the absence of a hydrogen source. The method has the advantages of minimizing the number and amount of byproducts by using a complex reducing agent and producing an organic-transition metal hydride safely without denaturation under more moderate reaction conditions.

Preparation method of organic-transition metal hydride complexes containing aryl group or alkyl group as hydrogen storage materials

The present invention relates to an advanced preparation method of organic-transition metal hydride used as hydrogen storage materials, the method including: preparing organic-transition metal-aluminum hydride complexes by reacting the organic-transition metal halide with metal aluminum hydride compounds; and preparing the organic-transition metal hydride by reacting the organic-transition metal aluminum hydride complexes with Lewis bases. Since the preparation method of the organic-transition metal hydride according to the present invention does not use catalysts, it has advantages that it does not cause problems due to poisoning and can prepare the organic-transition metal hydride at high yield under less stringent conditions. The hydrogen storage materials containing the organic-transition metal hydride prepared from the preparation method can safely and reversibly store a large amount of hydrogen.

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Seoul, South Korea

Jisoon Ihm