Samsung Electronics Co., Ltd.

Industry-University Cooperation Foundation Hanyang University

Jiseok Lee

Sangwon Hwang

Hwangju Song

Jaeeun Yoon

Youngjoo Lee

Garam Park

Namyong Kim

Taewon Seo

Joohyun Oh

Hobyeong Chae

Myoungjae Seo

Doopyo Yoon

Sangmu Lee

The present invention relates to a robot. A robot according to one embodiment of the present invention comprises: a body having a set volume: and a driving module provided in the left region and the right region of the body, respectively, and rotatably connected to the body by a rotation shaft, wherein the driving module comprises: a rotating member connected to the rotating shaft; a first driving part extending from one side of the rotating member slantwise by a first inclination angle with respect to the rotating shaft in a direction away from the rotating shaft; and a second driving part extending from the one side of the rotating member slantwise by a second inclination angle with respect to the rotating shaft in the direction away from the rotating shaft.

Robot

A memory device includes; a memory cell array including memory cells, a row decoder selecting a word line in response to a received address, and control logic including a sensing capacitor having a size proportional to a size of a word line capacitor associated with the selected word line. The control logic measures line resistance of the selected word line by precharging the selected word line, performing a charge sharing operation between the selected word line and the sensing capacitor following the precharging of the selected word line, and measuring a voltage of the sensing capacitor following the performing of the charge sharing operation.

Memory device detecting defect by measuring line resistance of word line

A storage device for performing a reliability check by using error correction code (ECC) data is provided. The storage device includes a memory controller configured to detect the number of errors of second read data read out by a second read operation, based on ECC data of first read data read by a first read operation of a memory device. The memory controller includes a memory check circuit that includes a counter configured to count states of memory cells, a comparator configured to compare respective count numbers of the states with one another, and a register configured to store the number of errors based on a result of the comparison.

Storage device for performing reliability check by using error correction code (ECC) data

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Seoul, South Korea

Jiseok Lee