Samsung Electronics Co., Ltd.

Jisang Lee

Jinyoung Kim

Sehwan Park

Ilhan Park

Joonsuc Jang

Jungmin Park

Joon Suc Jang

Kyunghoon Sung

Sanghyun Joo

Hyunggon Kim

Seoyoung Lee

Junho Kim

Wontaeck Jung

Garam Kim

Minji Cho

Byungyong Choi

Hyukje Kwon

Eunhyang Park

Hyojung Jang

A method of operating a memory device including a memory cell array having a plurality of memory cells and a plurality of word lines connected to the plurality of memory cells. The method includes performing an additional read operation on the plurality of memory cells by adjusting a voltage level applied to a selected word line WLconnected to memory cells to be additionally read for improvements in memory cell sensing characteristics and a voltage level applied to a plurality of unselected word lines WL, and performing a main read operation on the plurality of memory cells by adjusting a voltage level applied to at least one first word line among the plurality of unselected word lines WLto be different from a voltage level applied to the at least one first word line in the additional read operation.

Memory device and method for improving sensing characteristics of memory cells

A memory device includes a cell region in which memory blocks, respectively including gate electrodes and insulating layers, alternately stacked on a substrate, and channel structures, extending in a first direction, perpendicular to an upper surface of the substrate, passing through the gate electrodes and the insulating layers, and connected to the substrate, are arranged. A peripheral circuit region includes a row decoder connected to the gate electrodes and a page buffer connected to the channel structures. The memory blocks include main blocks and at least one spare block, wherein a length of the spare block is shorter than a length of each of the main blocks, in a second direction, parallel to the upper surface of the substrate.

Memory device including memory blocks different from each other

Aggressor memory cells connected to one or more aggressor wordlines are grouped into aggressor cell groups by performing a read operation with respect to the aggressor wordlines based on one or more grouping read voltages, where the aggressor wordlines are adjacent to a selected wordline corresponding to a read address among wordlines of a memory block. Selected memory cells connected to the selected wordline are grouped into a selected cell groups respectively corresponding to the aggressor cell groups. Group read conditions respectively corresponding to the selected cell groups are determined and group read operations are performed with respect to the plurality of selected cell groups based on the group read conditions. The read errors are reduced by grouping the selected memory cells into the selected cell groups according to the change of operation environments.

Nonvolatile memory device and method of operating the same

In a method of reading data in a nonvolatile memory device including a plurality of memory cells having a plurality of states including a first state and a second state, a first read operation for the first state is performed, and a second read operation for the second state is performed. To perform the first read operation, cell counts for a valley of the first state are obtained by performing a valley cell count operation for the first state, a first read voltage level for the first state is determined based on the cell counts and at least one first reference parameter for the first state, and a first sensing operation for the first state is performed by using the first read voltage level. To perform the second read operation, a second read voltage level for the second state is determined based on the cell counts and at least one second reference parameter for the second state, and a second sensing operation for the second state is performed by using the second read voltage level.

Method and device for reading data in a nonvolatile memory device based on cell counts of two states

A nonvolatile memory device includes cell strings commonly connected between bitlines and a source line where the cell strings are grouped into memory blocks. During a precharge period, channels of the cell strings of a selected memory block are precharged by applying a gate induced drain leakage (GIDL) on voltage to gates of GIDL transistors included in the cell strings of the selected memory block where the GIDL on voltage has a voltage level to induce GIDL. During the precharge period, precharge of channels of the cell strings of an unselected memory block are prevented by controlling a gate voltage of GIDL transistors included in the cell strings of the unselected memory block to prevent the GIDL. During a program execution period after the precharge period, memory cells of the selected memory block connected to a selected wordline are programmed by applying a program voltage to the selected wordline.

Nonvolatile memory device and method of programming in the same

A reading method for a non-volatile memory device, includes performing a normal read operation using a default read level in response to a first read command; and performing a read operation using a multiple on-chip valley search (OVS) sensing operation in response to a second read command, when read data read in the normal read operation are uncorrectable.

Non-volatile memory device, storage device having the same, and reading method thereof

A memory device includes a memory cell array including a plurality of memory cells; a voltage generator configured to generate voltages used for a program operation and a verify operation for the memory cells; and control logic configured to perform a plurality of program loops while writing data to the memory cell array, such that first to N-th (e.g., N&#x3e;=1) program loops including a program operation and a verify operation are performed and at least two program loops in which the verify operation is skipped are performed when a pass/fail determination of the program operation in the N-th program loop indicates a pass.

Growing community of inventors

Iksan-si, South Korea

Jisang Lee