Hitachi, Ltd.

Hitachi Vlsi Engineering Corp.

Renesas Technology Corp.

Other

Hitachi Ulsi Systems Co., Ltd.

Kokusai Electric Co., Ltd.

Jiroh Sakaguchi

Kenichi Kuroda

Shoji Yoshida

Toshifumi Takeda

Akinori Matsuo

Hisahiro Moriuchi

Masaki Shirai

Nobuo Tsukamoto

Hiroshi Noguchi

Kazuo Yamakido

Hiroto Kawagoe

Arata Nakagoshi

Atushi Hoshi

Isamu Mitomo

A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.

Semiconductor integrated circuit device

A nonvolatile storage element of single-layer gate structure constructed by arranging a floating gate formed of a conductive layer to partly overlap with a control gate formed of a diffused layer is provided with a barrier layer covering a part or the whole of the surface of the floating gate. Such nonvolatile storage elements are used for redundancy control of defects or change of functions.

Floating gate FET with hydrogen barrier shield

A method of controlling the time constant of a filter for use in a radio receiver which receives a signal, transmitted from a transmitting station at a predetermined period, intermittently at the predetermined period and demodulates and delivers the received signal, a filter circuit having the time constant control function based on the method, and a radio receiver having the filter circuit. Preferably, the filter has its time constant switchable stepwise and specifically, parallel connection of capacitors or shortcircuiting of resistors is controlled by turning on/off switches. A controller within the filter circuit or the radio receiver performs control for applying a predetermined periodical signal (or standard pulse signal) to the filter and controlling the time constant of the filter in accordance with an output signal (or triangular pulse) during a first time zone within each operation interval for the intermittent reception and for filtering the signal from the transmitting station and causing a demodulating circuit to demodulate and deliver a filtered signal.

Method of controlling filter time constant and filter circuit having the

A reference voltage generator includes a first n-channel MISFET which has a p.sup.+ -type polycrystalline silicon gate electrode, and second and third n-channel MISFETs which have n.sup.+ -type polycrystalline silicon gate electrodes. The first MISFET has its gate and source coupled in common. The second MISFET has its gate coupled to the drain of the first MISFET, and has its source coupled to an output terminal. The third MISFET is supplied across its gate and source with a voltage which is delivered to the output terminal. First and second bias currents to be supplied to the first and second MISFETs respectively are made levels proportional to the drain current of the third MISFET. As a result, the output voltage of the output terminal is made a level which is substantially in agreement with the difference between the threshold voltages of the first and second MISFETs. The output voltage of this circuit is allowed to exhibit favorable temperature characteristics by properly setting the ratio of the first bias current and the second bias current.

Reference voltage generator

An initial state-setting circuit wherein a malfunction preventing transistor is connected in series with an input transistor of a flip-flop, and is rendered conductive a short time after closure of a power supply switch. Even when noise arises immediately after the closure of the power supply, no malfunction due to the noise is induced, since the malfunction preventing transistor is not yet conductive.

Circuit for setting an initial state after connection of a power supply

Growing community of inventors

Tama, Japan

Jiroh Sakaguchi