Kabushiki Kaisha Toshiba

Other

Jgc Corporation

Jiro Yoshida

Makoto Azuma

Kazuhiro Suzuki

Koichi Mizushima

Risako Ueno

Toshihiko Nagano

Yuki Nobusa

Junko Akagi

Mamoru Kurata

Nobuyasu Chikamatsu

Hirofumi Ito

Shuichi Funatsu

Koh-ichi Kubo

Koji Ooyama

A photodetector includes a first cell for converting incident light into electric charges, the first cell including a first semiconductor layer, a second semiconductor layer and a first substrate interposing the first semiconductor layer with the second semiconductor layer; and a second cell for converting incident light into electric charges, the second cell including a third semiconductor layer, a fourth semiconductor layer, and a second substrate interposing the third semiconductor layer with the fourth semiconductor layer; wherein the second substrate is larger in thickness than the first substrate.

Photodetector comprising dual cells with different thickness of interposing substrates, photodetection device, laser imaging detection and ranging apparatus and method of manufacturing a photodetector

A process for producing propylene, which including feeding at least one of dimethyl ether and methanol to a reactor to be reacted in the presence of a catalyst; supplying an obtained reaction product to a separator by which low-boiling compounds having a boiling point of &#x2212;50&#xb0; C. or lower at atmospheric pressure among the reaction product are separated; and recycling a proportion of at least 70% of a total amount of the separated low-boiling compounds to said reactor.

Process and apparatus for producing propylene

There is provided a superconducting device including a substrate, a first superconductor layer supported by the substrate and containing Ln, AE, M and O, and a second superconductor layer containing a material represented by a formula of (Yb Ln&prime; )AE&prime; M&prime; O , the first and second superconductor layers forming a junction, and atomic planes each including M and O in the first superconductor layer and atomic planes each including M&prime; and O in the second superconductor layer being discontinuous to each other in a position of the junction, wherein each of Ln and Ln&prime; represents at least one metal of Y and lanthanoids, each of AE and AE&prime; represents at least one of alkaline earth metals, each of M and M&prime; represents a metal which contains 80 atomic % or more of Cu, y represents a value between 0 and 0.9, and z represents a value between 6.0 and 8.0.

Superconducting device and method of manufacturing the same

A superconductor element includes a first layer of an oxide superconductor, a second layer of an insulator, semiconductor, or metal, and an interlayer interposed between the first and second layers and formed of AgO.sub.x (where in 0&lt;.times.&lt; 1/2) .

Superconductor element and method of manufacturing the same

A heterojunction bipolar transistor comprises a base region of a first conductivity type formed of a first kind of semiconductor material, an emitter region of a second conductivity type formed of a second kind of semiconductor material which has a band gap greater than that of the first kind of semiconductor material and a smaller electron affinity, a transition region formed between the base region and the emitter region, and a collector region formed adjacent to the base region. The transition region is formed of a plurality of semiconductor layers such that band gaps sequentially increase in a stepped fashion from the semiconductor layer adjacent to the base region toward the semiconductor layer adjacent to the emitter region. The transition region is formed of a semiconductor material having an intermediate composition between the composition of the first kind of semiconductor material and that of the second kind of semiconductor material.

Heterojunction bipolar transistor having an emitter region with a band

A heterojunction bipolar integrated circuit is disclosed which uses a heterojunction bipolar transistor with a heterojunction between an emitter region and a base region. In this transistor, a pn junction between the base region and the emitter region has a greater area than a pn junction between the base region and a collector region. A plurality of such heterojunction bipolar transistors are isolated on a substrate to perform logic operations in an unsaturated region.

Heterojunction bipolar integrated circuit

A heterostructure bipolar transistor has an emitter layer, a base layer and a collector layer, the emitter layer being formed of a semiconductor material whose energy gap is wider than that of the base layer, so that a heterojunction is formed between the emitter layer and the base layer. One of the emitter layer and the base layer has first and second layers which are sequentially formed, and the first layer constituting the heterojunction has a lower impurity concentration than that of the second layer. When the impurity concentration and the thickness of the first layer are defined as N.sub.1 and W.sub.1, respectively, the following relation is satisfied:

Growing community of inventors

Yokohama, Japan

Jiro Yoshida