International Superconductivity Technology Center

Hokkaido Electric Power Company, Inc.

Fujikura Limited

Hitachi Cable, Inc.

The Kansai Electric Power Co., Inc.

Kyushu Electric Power Co., Inc.

Mitsubishi Cable Industries, Ltd.

Tokyo Gas Company Limited

Jiro Tsujino

Noriyuki Tatsumi

Shoji Tanaka

Atsushi Kume

Yasuji Yamada

Yuh Shiohara

Minoru Tagami

Kanshi Ohtsu

Yasuo Kanamori

Masaru Nakamura

Shigenori Yuhya

Kei Kikuchi

Yoh Shiohara

A composite material is disclosed which includes a substrate, an oriented film provided on a surface of the substrate and formed of a crystal of a Y123 metal oxide of the formula LnBa.sub.2 Cu.sub.3 O.sub.y wherein Ln stands for Y or an element belonging to the lanthanoid and y is a number of 6-7, and a layer of a Y123 metal oxide of the formula LnBa.sub.2 Cu.sub.3 O.sub.y wherein Ln stands for Y or an element belonging to the lanthanoid and y is a number of 6-7 formed on the oriented film.

Composite metal oxide material

A method for growing a superconductive film, comprising:

Method for preparing an oxide superconducting tape

Method of producing composite metal oxide material

The generation of a reaction product is suppressed between a metallic substrate and plasma in depositing a ceramic intermediate layer on the metallic substrate in a process for depositing an oxide film on the metallic substrate by thermal plasma flash evaporation method. Thus, there is no reaction phase in the ceramic intermediate layer and the metallic substrate, and an intermediated buffer layer of only oxide ceramic is deposited on a flat surface of the metallic substrate. The intermediate ceramic layer is deposited in inert atmosphere of a low oxygen concentration at a temperature of less than 600.degree. C. for the metallic substrate. Then, a superconducting thin film is deposited on the ceramic intermediate layer.

Process for depositing oxide film on metallic substrate by heat plasma

Growing community of inventors

Tokyo, Japan

Jiro Tsujino