Intel Corporation

Jiraporn Seangatith

Nitin A Deshpande

Eric Jin Li

Leonel R Arana

Sandeep B Sane

Jorge A Sanchez

Shankar Ganapathysubramanian

Poh Chieh Benny Poon

Die warpage is controlled for the assembly of thin dies. In one example, a semiconductor die has a back side and a front side opposite the back side. The back side has a semiconductor substrate and the front side has components formed over the semiconductor substrate in front side layers. A backside layer is formed over the backside of the semiconductor die to resist warpage of the die when the die is heated and a plurality of contacts are formed on the front side of the die to attach to a substrate.

Die warpage control for thin die assembly

Die warpage is controlled for the assembly of thin dies. In one example, a device having a substrate on a back side and components in front side layers is formed. A backside layer is formed over the substrate, the layer resisting warpage of the device when the device is heated. The device is attached to a substrate by heating.

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Chandler, AZ, United States of America

Jiraporn Seangatith