Nvidia Corporation

Jiping Ma

Yongchang Huang

Hua Chen

Jing Guo

Demi Shen

Xiangning Shi

A static read-only memory (SRAM) includes one or more bit cell rows that each includes a collection of bit cells. Each bit cell row is coupled to two or more different wordlines, where each wordline associated with a given bit cell row provides memory access to a different subset of bit cells within that bit cell row.

Technique for optimizing static random-access memory passive power consumption

A static random-access memory (SRAM) module includes a column select (RSEL) driver coupled to an input/output (I/O) circuit by an RSEL line. The I/O circuit is configured to read bit line signals from a bit cell within the SRAM module. During a read operation, the RSEL driver pulls the RSEL line to zero in order to cause p-type metal-oxide-semiconductors (PMOSs) within the I/O circuit to sample the bit line signals output by the bit cell. In response, an aggressor driver drives the RSEL line to a negative voltage, thereby reducing the resistance of the PMOSs within the I/O circuit.

Technique for improving static random-access memory sense amplifier voltage differential

The invention discloses a semiconductor memory device and a method for word line decoding and routing. The present invention relates generally to semiconductor memory field, Problems solved by the invention is that, to improve the quality of word line signals results in routing congestion. Embodiments of the invention provide the program as follows: a semiconductor memory device and a method for word line decoding and routing, dividing memory array of the semiconductor memory device into a plurality of smaller memory arrays, on a first metal layer routing first decoded row address, on a second metal layer below the first metal layer routing second decoded row address, and the output word line after decoding drives the plurality of smaller memory arrays. Embodiments of the invention are suitable for various semiconductor memory designs, including: on-chip cache, translation look-aside buffer, content addressable memory, ROM, EEPROM, and SRAM and so on.

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Shanghai, China

Jiping Ma