Texas Instruments Corporation

Jiong Ping Lu

Ming J Hwang

Dirk N Anderson

Jorge A Kittl

Hun-Lian Tsai

A process for forming a W-poly gate stack (,) comprising the steps of: (1) deposition of doped polysilicon (,) on a thin dielectric layer (,) covered substrate (,), (2) deposition of WNx by a CVD-based process, (3) thermal treatment to covert WNx into thermally stable barrier, WSiNx, (,) and to remove excess nitrogen and (4) deposition of W layer (,). The stack layers are then etched to form the gate electrode (,).

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Jiong Ping Lu