Samsung Electronics Co., Ltd.

Jinyub Lee

Seungjae Lee

June-Hong Park

Sungwhan Seo

TaeHyun Kim

Minsu Kim

Minseok Kim

Jinwook Lee

Sung-won Yun

Sangwon Hwang

Kyung-Hwa Kang

Hyejin Yim

Su-Yong Kim

Sungkyu Jo

A storage device includes a nonvolatile memory device and a controller configured to generate a read command according to a request of an external host device and transmit the read command to the nonvolatile memory device. The nonvolatile memory device is configured to perform a read operation in response to the read command, to output read data to the controller, and to store information of the read operation in an internal register.

Storage device including nonvolatile memory device and controller and operating method of the storage device

An external power control method includes determining whether to apply a second external voltage to a first node according to a drop of a first external voltage; generating a flag signal according to a drop of the second external voltage when the second external voltage is applied to the first node; transferring a voltage of the first node to a second node in response to the flag signal; and discharging at least one voltage of an internal circuit connected to the second node in response to the flag signal.

Nonvolatile memory device, memory system having the same, external power controlling method thereof

A memory system is provided which includes a nonvolatile memory; and a controller configured to control the nonvolatile memory, wherein the controller comprises a voltage detector configured to detect a level of a power supply voltage; and wherein when a level of the power supply voltage is lower than a first threshold value, the controller issues a reset command to the nonvolatile memory and then performs a reset operation.

Memory systems and operating methods of memory controllers

A nonvolatile memory device comprises multiple memory blocks each comprising multiple memory cells arranged at intersections of wordlines and bitlines, an address decoder configured to electrically connect first lines to wordlines of one of the memory blocks in response to an address, a line selection switch circuit configured to electrically connect the first lines to second lines in different configurations according to the address, a first line decoder configured to provide the second lines with wordline voltages needed for driving, and a voltage generator configured to generate the wordline voltages.

Nonvolatile memory device and related wordline driving method

A nonvolatile memory device includes a memory cell array and a read/write circuit connected to the memory cell array through bit lines. The read method of the nonvolatile memory device includes receiving a security read request, receiving security information, and executing a security read operation in response to the security read request. The security read operation includes reading of security data from the memory cell array using the read/write circuit, storing of the read security data in a register, performing security decoding on the read security data stored in the register using the received security information, resetting the read/write circuit, and outputting a result of the security decoding.

Nonvolatile memory, reading method of nonvolatile memory, and memory system including nonvolatile memory

A method, device and system are provided for programming a flash memory device, the method including executing a bit line setup operation, and executing a channel pre-charge operation simultaneously with the bit line setup operation, the channel pre-charge operation including applying a channel pre-charge voltage to all word lines; and the device including a voltage generator disposed for providing each of a program voltage, a read voltage, a pass voltage, and a channel pre-charge voltage, a high-voltage switch connected to the voltage generator and disposed for switchably providing one of the program voltage, read voltage, pass voltage, or channel pre-charge voltage, and control logic connected to the high-voltage switch and disposed for simultaneously executing a bit line setup operation and a channel pre-charge operation, the channel pre-charge operation comprising controlling the high-voltage switch to apply the channel pre-charge voltage to both selected and unselected word lines of the device.

Flash memory and a method for programming the flash memory in which a bit line setup operation is executed simultaneously with a channel pre-charge operation

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Seoul, South Korea

Jinyub Lee