Samsung Electronics Co., Ltd.

Ls Electric Co., Ltd.

Jinyoung Park

Heonjong Shin

Doohyun Lee

Hyunho Park

Byounguk Yoon

Yongseok Lee

Minsu Jung

Minchan Gwak

Jongchul Choi

Seongho Cho

Minwoo Yoo

Minsung Lee

Daeyoung Noh

Seungwook Lee

Je-Woo Han

Sanguk Park

Seon-Bae Kim

Youngsik Choi

Hwanjin Kim

Seungjae Bae

Hyunpil Kim

Chankeun Song

Seonbae Kim

Sungjoo Cho

Byoungik Kang

Yangwoon Roh

Seungjin Ham

Myunggyun Yoon

Heesub Shin

Heonsoon Jang

Seyeong Cheon

Hongseok Lee

Mingyu Kim

Sungmin Kim

Sangheon Kim

Yeunwook Lim

Hoyong Park

Younggeun Roh

Eunseok Hong

Unjeong Kim

Yonghwa Kim

Jinho Lim

Dongchan Kim

Misun Kim

Jongwoo Sun

Dong-Ho Jang

Jaehong Park

Kyungsoo Kim

Hyuk Kim

Hyungjoo Lee

Junho Yoon

Bokyung Sim

Kihwan Oh

Woochang Lee

Sangwuk Park

Ga-Jin Song

Mira Seo

Seonmyeong Choi

Hyomin Oh

Jongkyun Im

Sungmo Ahn

Jeongil Mun

Kyohyeok Kim

Jungpyo Hong

Seungwoon Lee

Kyungyub Jeon

Younggwon Koo

Sungyeon Kim

Yonghwan Kim

Kwangyong Choi

Jin Young Bang

Eunsung Park

Juneyoung Lee

Hyeongseok Jang

JungHwan Um

Jina Mock

Moonsook Lee

Kyen-hee Lee

Jongmahn Sohn

Donghoon Noh

Yongho You

Sangjean Jeon

Chanhoon Park

Jinseon Hwang

Il Sup Choi

Yeongeun Yook

Yangdoo Kim

Chan-Yong Jung

Hyunhee Kim

An electronic device may include a display and at least one processor configured to execute an application, play multimedia content, obtain information associated with playing the multimedia content, identify a synchronization parameter for synchronization, based on the obtained information, output a UI generated based on the obtained information and the synchronization parameter to the display, and synchronize the audio signal and the video signal.

Method and apparatus for synchronizing audio and video signals of multimedia content

A semiconductor device includes active regions extending in a first direction on a substrate; a gate electrode intersecting the active regions on the substrate, extending in a second direction, and including a contact region protruding upwardly; and an interconnection line on the gate electrode and connected to the contact region, wherein the contact region includes a lower region having a first width in the second direction and an upper region located on the lower region and having a second width smaller than the first width in the second direction, and wherein at least one side surface of the contact region in the second direction has a point at which an inclination or a curvature is changed between the lower region and the upper region.

Semiconductor device

A semiconductor device is provided. The semiconductor device includes: an active pattern provided on a substrate having an upper surface; an insulation pattern provided above the substrate and contacting an upper surface of the active pattern; channels spaced apart from each other along a direction perpendicular to the upper surface of the substrate, each of the channels including a material provided in the active pattern; and a gate structure contacting an upper surface of the insulation pattern, an upper surface of the channels, a lower surface of the channels, and sidewalls of the channels opposite to each other. A first distance between an upper surface of the active pattern and a lowermost one of the channels is greater than a second distance between an upper surface of one of the channels and a lower surface of an adjacent channel.

Multi-bridge channel field effect transistor with reduced gate-channel leakage current

A semiconductor device may include first and second active regions on a substrate, first and second active patterns on the first and second active regions, first and second source/drain patterns on the first and second active patterns, first and second silicide patterns on the first and second source/drain patterns, and first and second active contacts coupled to the first and second source/drain patterns. A lowermost portion of the first active contact is at a level higher than that of a lowermost portion of the second active contact. A thickness of the first silicide pattern is greater than that of the second silicide pattern.

A semiconductor device includes an active pattern on a substrate, a source/drain pattern on the active pattern, a gate electrode on a channel pattern connected to the source/drain pattern, an active contact on the source/drain pattern, a first lower interconnection line on the active contact, a second lower interconnection line on the gate electrode, a first spacer between the gate electrode and the active contact, and a second spacer between the first spacer and the gate electrode or the active contact. The gate electrode includes an electrode body portion and an electrode protruding portion protruding from a top surface thereof and contacting the second lower interconnection line. The active contact includes a contact body portion and a contact protruding portion protruding from a top surface thereof and contacting the first lower interconnection line. A top surface of the first spacer is higher than a top surface of the second spacer.

Semiconductor device and method of fabricating the same

Methods of forming a semiconductor device may include: providing a substrate on which a layer is formed; forming a lower hard-mask layer, which includes silicon, on the layer; forming an upper hard-mask pattern, which includes oxide, on the lower hard-mask layer; forming a lower hard-mask pattern by etching the lower hard-mask layer using the upper hard-mask pattern as an etch mask and using an etching gas that includes a metal-chloride-based first gas and a nitride-based second gas; and forming a plurality of contact holes in the layer by etching the material layer using the lower hard-mask pattern as an etch mask.

Methods of forming semiconductor devices

A semiconductor device includes a lower structure including lower wirings. A horizontal wiring layer is disposed on the lower structure while including a horizontal conductive layer, and a horizontal insulating layer extending through the horizontal conductive layer. A stack structure is disposed on the horizontal wiring layer. A channel structure extending into the horizontal wiring layer while extending through the stack structure is provided. A through electrode connected to the lower wirings while extending through the stack structure and the horizontal insulating layer is provided. The stack structure includes insulating layers and electrode layers repeatedly alternately stacked, and an interlayer insulating layer disposed at side surfaces of the insulating layers and the electrode layers. The through electrode includes a first portion extending into the interlayer insulating layer, and a second portion disposed between the first portion and the lower wirings while having a smaller horizontal width than the first portion.

Semiconductor device including channel structure and through electrode, electronic system, and method of forming the same

A semiconductor device may include an active pattern on a substrate, a source/drain pattern on the active pattern, a channel pattern connected to the source/drain pattern, a gate electrode on the channel pattern, an active contact on the source/drain pattern, a first lower interconnection line on the gate electrode, and a second lower interconnection line on the active contact and at the same level as the first lower interconnection line. The gate electrode may include an electrode body portion and an electrode protruding portion, wherein the electrode protruding portion protrudes from a top surface of the electrode body portion and is in contact with the first lower interconnection line thereon. The active contact may include a contact body portion and a contact protruding portion, wherein the contact protruding portion protrudes from a top surface of the contact body portion and is in contact with the second lower interconnection line thereon.

Semiconductor processing equipment and an electrostatic chuck include a semiconductor having: an upper electrode; a gas supplier connected to the upper electrode; and a substrate supporting structure spaced apart from the upper electrode to define a processing volume. The substrate supporting structure supports a substrate and includes: a lower electrode having a side area disposed outside a step formed at an outer perimeter portion of the lower electrode and a processing area disposed inside the step; a first plate disposed on the lower electrode; an attraction electrode disposed on the first plate; and a second plate disposed on the attraction plate. The second plate supports the substrate in a state in which the substrate is laid on an upper surface of the second plate. Each of the first plate and the second plate includes ceramic. The lower electrode has a maximum height at a central portion of the processing area.

Semiconductor processing equipment including electrostatic chuck for plasma processing

An electronic device includes a communication interface operable to perform contactless communication with an external device; and a processor operable to control to determine a communication type to be performed with the external device; when the communication type is a first type of continuous communication, configure data in a long packet structure; when the communication type is a second type of discontinuous communication, configure data in a short packet structure; and perform data communication in the continuous communication or in the discontinuous communication with the external device on the basis of the determined communication type.

Continuous communication method and apparatus of contactless communication device

A current sensing device according to the present invention may comprise: a substrate part which includes at least two base substrates stacked in one direction and through which a circuit passes in the one direction; a coil part which is formed on at least one of the base substrates and surrounds the circuit; and a core part which is disposed between the base substrates while being spaced apart from the coil part, and surrounds the circuit.

Current sensing device

The present disclosure relates to an earth leakage breaker and an arc detection apparatus attachable/detachable to/from the earth leakage breaker. An earth leakage breaker and an arc detection apparatus according to one embodiment of the present disclosure comprise: a body of the earth leakage breaker; and an arc detection module attachably/detachably coupled to the body of the earth leakage breaker so as to detect an arc current, wherein the arc detection module comprises: an arc detection unit connected to a first load side terminal of the body of the earth leakage breaker so as to detect an arc current flowing through a line; a control unit for determining an arc current on the basis of an arc detection signal delivered by the arc detection unit; and an output unit for outputting a signal or a current, according to a control signal of the control unit.

Earth leakage breaker and arc detection apparatus attachable/detachable to/from same earth leakage breaker

An electronic device includes a housing including a front plate and a back plate opposite the front plate, a touchscreen display exposed through a portion of the front plate and including an organic light emitting diode (OLED), a fingerprint sensor interposed between the display and the back plate and overlapping the display when viewed above the front plate, and a processor operatively connected with the display and the fingerprint sensor.

Electronic device for compensating color of display

A continuous communication apparatus includes a communication interface configured for contactless communication with a different electronic device; and a processor configured to detect a trigger to initiate contactless communication with the different electronic device; determine a communication type associated with communication to be performed with the different electronic device upon detecting the trigger; set at least one parameter associated with continuous communication when the communication type is the continuous communication; and perform the continuous communication with the different electronic device on the basis of the configured parameter.

Disclosed is a computer-readable medium including a program code. The program code, when executed by a processor, causes the processor to place an electrically active pattern having a first width and a first least margin area, on a layer, to place a first dummy pattern having a second width wider than the first width and having a second least margin area, on the layer, and to place a second dummy pattern having a third width and a third least margin area, on the layer, based on whether a ratio of an area of the layer to areas of the electrically active pattern and the first dummy pattern is within a reference range.

Method for layout design and semiconductor device manufactured based on the same

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Gyeonggi-do, South Korea

Jinyoung Park