Samsung Electronics Co., Ltd.

Yonsei University

Lg Chem, Ltd

Amkor Technology, Inc.

Intellectual Discovery Co., Ltd.

Jinyoung Kim

Sehwan Park

Youngdeok Seo

Ilhan Park

Dongmin Shin

Sangwan Nam

Hyun Seok Seo

Joonsuc Jang

Heegeun Jeong

Wandong Kim

Haksoo Han

Taehun Lee

Jinuk Kwon

Jeong-Ho Lee

Makoto Hirano

Jaeduk Yu

Woohyun Kang

Chongkwang Chang

Sungmin Joe

Kwansik Cho

Euiyeol Kim

Youngwoo Chung

Kwangyoung Oh

Hyounmin Baek

Okseon Yoon

Jongkwang Jung

Soonkyu Lee

Donghoon Khang

Seungjae Lee

Sanghyun Choi

Jinwan An

Jongchul Park

Jongmin Baek

Min Woo Lee

Kyoman Kang

Jisang Lee

Min Gon Lee

Heewon Lee

Jongmin Choi

Kangho Roh

Youngki Jung

Junho Kim

Seoyoung Lee

Sungkyu Kim

Taehui Na

Min Ji Lee

Changjoon Lee

Yonggil Han

Beomsuk Lee

Doowon Kwon

Ho-chul Ji

Seungjoo Nah

Jongsung Lee

Junho Shin

Jongryul Kim

Seungwan Woo

Haeil Lee

Noma Kim

YoonJoo Kim

Sangsup Jeong

Dongmoon Ok

Minji Cho

Seokjin Kwon

Seongho Son

Romi Lee

Eunhyang Park

Yunjeong Choi

Jameyung Kim

Mangeun Cho

Shinho Oh

Jihye Shim

Younghwi Yang

Myeongsoo Kim

Kyeongjae Byeon

Taemin Kwon

Hyojung Jang

Hanki Yoon

Heetai Oh

Jihee Yang

Dongchul Lee

Silwan Chang

Hochul Ji

Jiyeong Kim

In Ho Ro

Sungki Min

Daun Jung

Changbin Cho

DooHyun Park

DongJin Kim

JaeHun Bae

SeWoong Cha

JinHan Kim

JongSik Paek

Youkreol Na

Sangmi Lee

Gunhwi Kim

Daero Lee

A method of operating a memory device including a memory cell array having a plurality of memory cells and a plurality of word lines connected to the plurality of memory cells. The method includes performing an additional read operation on the plurality of memory cells by adjusting a voltage level applied to a selected word line WLconnected to memory cells to be additionally read for improvements in memory cell sensing characteristics and a voltage level applied to a plurality of unselected word lines WL, and performing a main read operation on the plurality of memory cells by adjusting a voltage level applied to at least one first word line among the plurality of unselected word lines WLto be different from a voltage level applied to the at least one first word line in the additional read operation.

Memory device and method for improving sensing characteristics of memory cells

A semiconductor package includes a redistribution structure including a wiring structure and an insulating structure covering the wiring structure, the redistribution structure having a first surface and a second surface, which are opposite to each other, the insulating structure including a polymer, a semiconductor chip on the first surface, the semiconductor chip being connected to at least one first wiring pattern in the wiring structure, a passivation insulating film covering the second surface, the passivation insulating film including an inner surface contacting the insulating structure and a hole sidewall defining a hole, the passivation insulating film including an inorganic insulating material, a conductive pad passing through the passivation insulating film via the hole and contacting the second wiring pattern, the conductive pad having a pad sidewall contacting the hole sidewall, and an external connection terminal on the conductive pad.

Semiconductor package including redistribution structure and passivation insulating film in contact with conductive pad

An electronic device includes: an Application Processor (AP) including a CPU; and an audio processing unit configured to: receive an audio stream of M channels from the CPU, convert the M-channel audio stream into an N-channel audio stream, the N-channel being different from the M-channel, output the N-channel audio stream through an output device. The audio processing unit is further configured to: detect a connection with the external electronic device through an audio output interface; determine whether to stop the converting the M-channel audio stream into the N-channel audio stream, based on information received from the CPU; and transmit, via the audio output interface, the M-channel audio stream to the external electronic device in response to the determination of stopping the converting the M-channel audio stream into the N-channel audio stream.

Electronic device for converting number of audio channels, and electronic device operating method

A semiconductor package includes a first semiconductor chip on a lower structure. A first underfill is between the first semiconductor chip and the lower structure. The first underfill includes a first portion adjacent to a center region of the first semiconductor chip, and a second portion adjacent to an edge region of the first semiconductor chip. The second portion has a higher degree of cure than the first portion. A plurality of inner connection terminals is between the first semiconductor chip and the lower structure. The plurality of inner connection terminals extends in the first underfill.

Semiconductor package including underfill and method of forming the same

An image sensor includes: a semiconductor substrate having a first side and a second side opposite to each other; a plurality of photoelectric regions arranged in the semiconductor substrate in a first direction and a second direction, perpendicular to each other, in a first region of the semiconductor substrate; and a first separation structure disposed between the plurality of photoelectric regions in the first region of the semiconductor substrate. The first separation structure includes a lower separation structure and an upper separation structure disposed above the lower separation structure, and the first separation structure includes a linear portion located between the plurality of photoelectric regions and extending in the first direction, wherein, in a cross-sectional structure of the linear portion of the first separation structure in the first direction, at least one of an upper surface of the lower separation structure and a lower surface of the upper separation structure has a wavy shape.

Image sensor

A memory device may include a memory block and a control circuit. The memory block may include a first sub-block and a second sub-block that are connected between a common source line and a plurality of bit lines and may be vertically stacked. The control circuit may be configured to select any one of the common source line and the plurality of bit lines as a transmission path of an erase voltage based on positions of the first sub-block and the second sub-block, and perform erase operations on the first sub-block and the second sub-block in units of sub-blocks.

Memory device that performs erase operation to preserve data reliability

An electronic device is provided. The electronic device includes a plurality of audio output devices and at least one processor operatively connected to the plurality of audio output devices, wherein the at least one processor may be configured to identify orientation information of the electronic device, based on detecting an output of audio data, transmit, to each audio output device, channel information of audio data to be output by each of the plurality of audio output devices, based on the orientation information of the electronic device, and control the plurality of audio output devices so that each audio output device selects a channel and outputs audio data of the selected channel, based on the channel information.

Electronic device and multichannel audio output method using same

An image sensor includes a semiconductor substrate having first and second opposing surfaces thereon and a photoelectric conversion region of first conductivity type therein, which extends between the first and second surfaces. A two-dimensional array of semiconductor photoelectric conversion devices of second conductivity type is provided within the photoelectric conversion region. A first grid-shaped isolation region is provided, which extends into the photoelectric conversion region from the first surface, and has a first electrically conductive material therein. A second grid-shaped isolation region is provided, which extends into the photoelectric conversion region from the second surface. An electrically conductive contact region is provided, which (i) extends on the second surface and into a portion of the photoelectric conversion region that is outside the two-dimensional array of semiconductor photoelectric conversion devices, and (ii) electrically contacts a portion of the first electrically conductive material within the first grid-shaped isolation region.

Image sensors having dual-surface isolation regions and deep through-substrate contacts and methods of forming same

An image sensor includes; a substrate having a first surface and an opposing second surface and including unit pixels respectively having photoelectric conversion regions, a semiconductor pattern disposed in a first trench defining the unit pixels, the semiconductor pattern including a first semiconductor layer provided on an inner surface of the first trench and a second semiconductor layer provided on the first semiconductor layer, and a first contact provided on the second surface and connected to the semiconductor pattern. A height of the first semiconductor layer from a bottom surface of the first trench is less than a height of the second semiconductor layer from the bottom surface of the first trench.

Image sensor and method of fabricating same

An image sensor includes a substrate including a first region and a second region surrounding the first region, a light sensing element in the substrate, a planarization layer on the light sensing element, a color filter array layer including color filters on the planarization layer on the first region of the substrate, a light blocking metal pattern on the planarization layer on the second region of the substrate, a dummy color filter layer on the light blocking metal pattern on a portion of the second region adjacent to the first region of the substrate, and microlens on the color filter array layer. Active pixels are in the first region, and optical black (OB) pixels are in the second region.

Image sensor and method of manufacturing the same

An image sensor includes a substrate having first and second surfaces. A separation structure penetrates the substrate. Photoelectric conversion device regions are spaced apart from each other in the substrate. Color filters are disposed on the second surface of the substrate. Microlenses are disposed on the color filters. The separation structure includes lower and upper separation patterns, first line portions that run parallel to each other, and second line portions that perpendicularly intersect the first line portions. An upper surface of the lower separation pattern or a lower surface of the upper separation pattern has a wavy or sawtooth shape. In intersecting regions in which the first line portions and the second line portions intersect, a vertical length of one of the lower separation pattern and the upper separation pattern is about 2 to 10 times greater than a vertical length of the other.

Image sensor including separation structure

A display panel in which a resistance structure is provided on a test pattern to prevent a circuit of the display panel from being damaged by static electricity introduced into the test pattern, and a display apparatus having the same are provided. The display panel includes: a substrate; a plurality of pixel circuits provided on the substrate and configured to drive a plurality of inorganic light emitting devices; a test line provided on the substrate and extending from an edge of the substrate; an insulating layer provided on the test line; and a resistance structure provided on the test line, the resistance structure including: at least two vertical interconnect accesses (vias) passing through the insulating layer, and a resistance layer provided on the insulating layer and extending between the at least two vias, wherein the at least two vias connect the test line and the resistance layer to each other, and the test line is discontinuous at an area between the at least two vias, and wherein the resistance layer is configured to receive, through one of the at least two vias, a current applied to the test line.

Display panel and display apparatus having the same

An image sensor includes a semiconductor substrate having a first surface and a second surface. The first surface includes an element isolation trench. An element isolation layer is arranged inside the element isolation trench. The element isolation layer defines an active region. A gate electrode is arranged on the first surface of the semiconductor substrate. An interlayer insulating layer is arranged on the first surface of the semiconductor substrate and covers the gate electrode. A ground contact is configured to penetrate the element isolation layer and the interlayer insulating layer and contacts the semiconductor substrate. A color filter is arranged on the second surface of the semiconductor substrate.

An operating method of a nonvolatile memory device for programming multi-page data, the operating method including: receiving the multi-page data from a memory controller; programming first page data among the multi-page data to first memory cells connected to a word line adjacent to a selected word line; reading previous page data previously stored in second memory cells connected to the selected word line based on a first sensing value and a second sensing value after programming the first page data; calculating a first fail bit number by comparing first bits of the previous page data read based on the first sensing value to second bits of the previous page data read based on the second sensing value; and programming the previous page data read from the second memory cells and second page data among the multi-page data to the second memory cells based on the first fail bit number.

Operating method of a nonvolatile memory device for programming multi-page data

Aggressor memory cells connected to one or more aggressor wordlines are grouped into aggressor cell groups by performing a read operation with respect to the aggressor wordlines based on one or more grouping read voltages, where the aggressor wordlines are adjacent to a selected wordline corresponding to a read address among wordlines of a memory block. Selected memory cells connected to the selected wordline are grouped into a selected cell groups respectively corresponding to the aggressor cell groups. Group read conditions respectively corresponding to the selected cell groups are determined and group read operations are performed with respect to the plurality of selected cell groups based on the group read conditions. The read errors are reduced by grouping the selected memory cells into the selected cell groups according to the change of operation environments.

Nonvolatile memory device and method of operating the same

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Seoul, South Korea

Jinyoung Kim