Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Samsung Displayco., Ltd.

Jinwook Yang

Chang-Mo Park

Gyuhwan Oh

Jongman Bae

Jiyoon Chung

Soyeon Eom

Junhwan Paik

Heechang Kim

Yongjin Park

Sang Jae Yeo

A semiconductor memory device including a substrate; a first conductive line on the substrate and extending in a first direction that is parallel to an upper surface of the substrate; a second conductive line extending in a second direction that intersects the first direction; a memory cell between the conductive lines and including a lower electrode pattern, a data storage element, an intermediate electrode pattern, a switching element, and an upper electrode pattern sequentially stacked on the first conductive line; and a sidewall spacer on a side surface of the memory cell, wherein the side surface of the memory cell includes a first concave portion at a side surface of the switching element, and the sidewall spacer includes a first portion on a side surface of the upper electrode pattern, and a second portion on the first concave portion, the second portion being thicker than the first portion.

Semiconductor memory device

A method for separating a window includes providing a display device including a display panel, a window disposed on the display panel and including a color layer. An adhesive layer is disposed between the display panel and the window. Heat is applied to the display device. The method includes inserting a disassembling stick between the display panel and the window to separate an edge of the display panel from the window. The method includes cooling the display device. The method includes separating the display panel and the window from each other.

Apparatus for separating a window and method for separating a window using the same

A variable resistance memory device includes a first conductive line structure having an adiabatic line therein on a substrate, a variable resistance pattern contacting an upper surface of the first conductive line structure, a low resistance pattern contacting an upper surface of the variable resistance pattern, a selection structure on the low resistance pattern, and a second conductive line on the selection structure.

Variable resistance memory devices including self-heating layer and methods of manufacturing the same

Embodiments may be directed to a gate driving circuit. The gate driving circuit includes a pre-charge unit, a pull-up unit, a boosting unit, and a discharge unit. The pre-charge unit pre-charges a first node in response to a first input signal. The pull-up unit outputs a first clock signal as a gate driving signal in response to a first node signal of the first node. The boosting unit boosts the first node signal of the first node in response to the first node signal and the first clock signal. The discharge unit discharges the first node to a gate-off voltage level in response to a second input signal and a second clock signal.

Gate driving circuit and display device including the same

Growing community of inventors

Hwaseong-si, South Korea

Jinwook Yang