Samsung Electronics Co., Ltd.

Intel Corporation

Samsung Display Co., Ltd.

Jinwook Lee

Dohyoung Kim

Yong-Ho Jeon

GeumJung Seong

Sungwoo Myung

Jisoo Oh

Heeseok Eun

Kwang-Yong Yang

Tae-Hoon Kim

Heewon Lee

Dongouk Moon

Chanha Kim

Seungkyung Ro

Yongseok Lee

Dongwoo Han

Jeongyun Lee

Seunghan Lee

Kwangwoo Lee

Yunjung Lee

Hongsik Shin

Haegeon Jung

Wonhyuk Lee

Keomyoung Shin

Kyungyub Jeon

Hongmo Je

Junghwan Choi

Hyunjoon Kim

Jongchul Park

Jisoo Kim

Bongsoon Lim

YongChan Park

Junyoung Park

Minje Park

Hyunkyo Oh

Jindo Byun

Joohwan Kim

Jong-Nam Baek

Sangwon Hwang

Wijik Lee

Eunseok Shin

Donggi Lee

Hyunjoon Yoo

Jinyub Lee

Sooyoung Ji

Suk-Eun Kang

Changyun Moon

Sanghwa Jin

Heon Jekal

Dong Kwon Kim

Bongjin Jun

Wooju Ryu

Juwon Lee

Sanghui Park

Oak-Ha Kim

Dongkwon Kim

Boogeon Yoon

A method of recovering data in a storage device is provided. The method includes: receiving backup storage information associated with a backup storage device from a host device, both the host device and the backup storage device being external to the storage device, and the backup storage device being configured to store backup data corresponding to first data; performing a data read operation on the first data; based on an unrecoverable data failure occurring while reading the first data, directly receiving the backup data corresponding to the first data from the backup storage device based on the backup storage information; and performing a data recovery operation for the first data based on the backup data.

Method of recovering data in storage device using network and storage device performing the same

Storage devices and systems implementing blockchain networks based on proof of space (PoS) are described. A PoS module may be configured to perform PoS processing of PoS data transferred through an interface circuit to generate operation data. A security module may be configured to perform encryption of user data (to generate first encrypted data) and encryption of the operation data (to generate second encrypted data) using different encryption algorithms. A nonvolatile memory device may then store the first encrypted data and the second encrypted data in different namespaces (e.g., user data may be stored in a user namespace and PoS data may be stored in a PoS namespace). Accordingly, interference and/or malicious effect between the user data and the PoS data may be reduced (e.g., blocked) and stability of the PoS algorithm may be enhanced.

Storage device for a blockchain network based on proof of space and system including the same

A semiconductor device includes a phase splitter configured to output a plurality of clock signals having different phases by using a plurality of external clock signals having different phases, a plurality of code generators configured to receive a pair of selection clock signals determined from the plurality of clock signals and to output a phase code corresponding to a phase difference error between the pair of selection clock signals, and a delay circuit configured to at least partly simultaneously adjust at least two of a rising edge and a falling edge of each of the plurality of external clock signals with reference to the phase code during a lock time.

Semiconductor device

Provided is an operating method of a storage device including a memory controller and a memory device, the operating method including storing a plurality of streams received from a host in the memory device; performing a management operation on a first storage region of the memory device in which a first stream from among the plurality of streams is stored; and performing a management operation on a second storage region of the memory device in which a second stream selected from among the plurality of streams based on an attribute of the first stream is stored.

Storage device including memory controller and operating method of the same

A storage system includes: an interconnector; a plurality of storage devices connected to the interconnector and configured to store data; a host device connected to the interconnector, and configured to: set a plurality of erasure coding schemes that are different from each other, and determine a target erasure coding scheme corresponding to original data to be stored in the plurality of storage devices among the plurality of erasure coding schemes, based on device characteristics of the plurality of storage devices or data characteristics of the original data; and an erasure coding controller configured to: divide the original data into a plurality of data blocks corresponding to the target erasure coding scheme, and generate one or more parity blocks corresponding to the target erasure coding scheme, by encoding the plurality of data blocks.

Method of data recovery and storage system performing the same

A method of writing data in a storage device is provided. The method includes: receiving write data from a host device; monitoring an operating temperature of the storage device; generating a plurality of write data blocks respectively corresponding to a plurality of storage regions of the storage device based on the write data; and based on the operating temperature, performing a write throttling operation including performing a write operation on P write data blocks among the plurality of write data blocks by transmitting a write command to P storage regions among the plurality of storage regions and skipping the write operation on X write data blocks among the plurality of write data blocks by skipping an operation of transmitting the write command to X storage regions among the plurality of storage regions. P and X are natural numbers.

Method of writing data in storage device using write throttling and storage device performing the same

A method is provided to operate a storage device including a storage controller and a plurality of nonvolatile memory devices. A plurality of original data blocks are received at the storage controller from a host. An original parity block is generated based on the original data blocks. The original data blocks and the original parity block are stored in respective ones of the nonvolatile memory devices, wherein a first original data block of the original data blocks is stored in a first one of the nonvolatile memory devices, and wherein the original parity block is stored in a second one of the nonvolatile memory devices. A new data block corresponding to the first original data block is received at the storage controller from the host after storing the original data blocks and the original parity block. The new data block is stored in the first nonvolatile memory device. A new parity block is generated at the second nonvolatile memory device based on the original parity block and based on differences between the first original data block and the new data block.

Storage devices including nonvolatile memory and related methods of operating such storage devices

In a method of operating a storage device including a nonvolatile memory device, an abnormal area may be detected as an optional area in the nonvolatile memory device, and optional data optional data may be stored in the optional area. The abnormal area may be a portion of the nonvolatile memory device having an access time exceeding a reference latency.

Method of operating a storage device including detecting an abnormal area, where an access time exceeds a reference latency, as an optional area in the nonvolatile memory device and storing optional data in the optional area, and a storage device for performing the method

A method of operating a storage server which includes a plurality of storage devices and a storage node configured to control the plurality of storage devices is provided. The method includes grouping first virtual machines based on workload characteristics of the first virtual machines, to generate a virtual machine group table; receiving, from first storage devices, attribute information of the first storage devices, the first storage devices being allocated to the first virtual machines; collecting recovery information from the first storage devices; generating a recovery sequence table by determining recovery sequences based on the virtual machine group table, the attribute information, and the recovery information; and providing a corresponding recovery sequence to a second storage device of the plurality of storage devices, based on the recovery sequence table, the second storage device being allocated to a new second virtual machine different from the first virtual machines.

Storage server and operation method of storage server

A method of determining whether a display manufacturing facility is abnormal includes a first step of obtaining facility information data of facilities used to manufacture a display panel, a second step of preparing a display module by attaching a printed circuit board and a driving chip to the display panel, a third step of obtaining preliminary inspection data through an on-off test on the display module, a fourth step of associating the facility information data with the preliminary inspection data, establishing a database by repeatedly performing the first step to the fourth step, obtaining real-time inspection data through an on-off test on a display module to be inspected, determining whether the display module to be inspected is normal, and determining a facility causing abnormality of the display module, from the real-time inspection data by using the database, in case that the display module to be inspected is abnormal is determined.

Method of determining abnormality of display manufacturing facility

A resolution measurement apparatus includes a stage configured to receive a display module including an optical part. The stage includes an opening that overlaps the optical part, when viewed in a plan view, when the display module is disposed on the stage. The resolution measuring apparatus further includes a plurality of cameras disposed above the stage, a light source disposed under the stage and overlapping the opening when viewed in the plan view, and a lens disposed between the light source and the stage. The lens overlaps the opening when viewed in the plan view, and the optical part overlaps the lens, when viewed in the plan view, when the display module is disposed on the stage.

Resolution measurement apparatus and resolution measurement method using the same

A semiconductor device including a gate pattern on a substrate and including a gate dielectric layer, a gate electrode, and a gate capping pattern that are sequentially stacked; a gate spacer on a sidewall of the gate pattern; a source/drain pattern in the substrate; a contact pad on the source/drain pattern, a source/drain contact on the contact pad; and a buried dielectric pattern between the gate spacer and the source/drain contact, wherein the gate spacer includes a first segment between the gate electrode and the source/drain pattern; a second segment that extends from the first segment and between the gate electrode and the source/drain contact; and a third segment on the second segment, the buried dielectric pattern is between the third segment and the source/drain contact, and is absent between the first segment and the contact pad and is absent between the second segment and the source/drain contact.

Semiconductor device and method of fabricating the same

Semiconductor devices may include a substrate, an active region that is on the substrate and extends in a first direction, a gate structure that traverses the active region and extends in a second direction that may be different from the first direction, a source/drain region on the active region adjacent a side of the gate structure, an insulating layer on the substrate, the gate structure and the source/drain region, and a contact structure that is in the insulating layer and is connected to the source/drain region. In the source/drain region, a contact region that is in contact with the contact structure includes first and second side regions spaced apart from each other in the second direction and a central region between the first and second side regions, and at least one of the first and second side regions may include a recess.

Semiconductor devices

A storage device includes a nonvolatile memory device including a memory block and a memory controller. The memory block includes a first memory region connected with a first word line and a second memory region connected with a second word line. The memory controller sets a read block voltage based on a first read voltage of the first memory region. The memory controller determines a second read voltage of the second memory region based on variation information and the read block voltage.

Storage device including nonvolatile memory device and operating method thereof

A storage device includes a nonvolatile memory device including a plurality of memory blocks, each including a plurality of memory cells connected to a plurality of word lines, and a controller configured to perform a first read operation on memory cells connected to a selected word line included in a selected memory block based on a request of an external host device. The controller is further configured to perform a check read operation that checks a reliability of the memory cells of the selected memory block after performing the first read operation. In the check read operation, the controller is further configured to select and perform one of an actual check and a machine learning-based check.

Storage device and operating method of storage device

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Seoul, South Korea

Jinwook Lee