Samsung Electronics Co., Ltd.

Lucent Technologies Inc.

Sogang University Research Foundation

Industry-university Cooperation Foundation Sogang University

Jinwook Burm

Rose Fasano Kopf

Robert Alan Hamm

Robert William Ryan

Alaric Tate

Hongseok Lee

Hoon Song

Young Shin Kim

Won-hee Choe

Kanghee Won

Sang-Wook Han

Himchan Park

Bongsub Song

Na-Yeon Cho

Seung-Ryong Cho

Moon-Deock Kim

A beam deflector, a holographic display device including the beam deflector, and a method of driving the beam deflector are provided. The beam deflector includes first electrodes spaced apart from each other on a first substrate, second electrodes spaced apart from each other on a second substrate, a liquid crystal layer between the first substrate and the second substrate, and a controller configured to cause active prisms to be formed in the liquid crystal layer and to form a floating zone by turning off a voltage of at least one of the first electrode and the second electrode disposed between adjacent ones of the active prisms.

Beam deflector, holographic display device having the same, and method of driving the beam deflector

Provided is an analog-to-digital (A/D) converter that may be used in an image sensor and a ramp signal generator that is used in an A/D converter. The ramp signal generator may generate a ramp signal and a reference voltage signal that include noise that has same noise characteristics that are input into the ramp signal, such that the signal to noise ratio (SNR) is improved and the image quality is also improved.

Ramp signal generator, analog to digital converter, and image sensor

An avalanche photodiode capable of generating a minimal surface leakage current as well as achieving a uniform electrical field. The avalanche photodiode includes a semiconductor substrate provided with a lower electrode underneath it, an amplification layer producing pairs of electron-holes through ionized collision of carriers injected by an internal electrical field, and an absorption layer producing the carriers according to splitting of the pairs of electron-holes by the electrical field. The avalanche photodiode further includes a contact layer formed on the absorption layer, with a core section in the center of the contact layer and a guard section surrounding the core section spaced apart from each other, and at least one upper electrode with a core electrode formed on the core section and a guard electrode formed on the guard section. The upper electrode generates the internal electrical field together with the lower electrode.

Avalanche photodiode

The specification describes a photolithography process using multiple exposures to form z-dimension patterns. Multiple exposures at different thickness levels are made using photomasks aligned with a latent image of alignment marks formed during the first exposure. The latent image is visible to the alignment system of commercial steppers.

Method of manufacturing schottky gate transistor utilizing alignment

Alignment techniques for photolithography utilizing multiple photoresist

The specification describes a technique for repairing wafer fractures that occur during wafer fabrication. The fractured pieces are joined edge-to-edge at the fracture line and bonded with epoxy adhesive. The method succeeds because the dimensions of the fracture line after bonding is within the reregistration tolerance of commercial step-and-repeat cameras and the reregistration capability of the camera allows normal exposure of sites that do not intersect the fracture line.

Repairing fractured wafers in semiconductor manufacturing

Growing community of inventors

Seoul, South Korea

Jinwook Burm