Lg Electronics Inc.

Cj Cheiljedang Corporation

Jinwoo Sung

Ji Hyun Lee

Moongoo Choi

Hyunkwon Shin

Seongman Jeon

Dongseon Jang

Mangeun Kim

Joo Hee Lee

Jinmok Oh

Byoungkwon Cho

Koun Park

Juchul Lee

Imsang Lee

Jong-cheol Seok

Se Hoon Sim

A graphene optical device according to an embodiment of the present disclosure includes: an upper semiconductor layer; a lower semiconductor layer; and a graphene capacitor disposed between the upper semiconductor layer and the lower semiconductor layer, wherein the graphene capacitor includes a first graphene, a second graphene, and a first insulation layer disposed between the first graphene and the second graphene, wherein the first graphene and the second graphene partially overlap each other when viewed from the upper semiconductor layer toward the lower semiconductor layer.

Graphene optical device

A hybrid organic/inorganic quantum dot composite with high reliability is disclosed. The hybrid organic/inorganic quantum dot composite includes quantum dot, polymer resin, and silica, in which the silica is formed in the polymer resin, one end of the polymer resin forms a chemical bond with the quantum dot, and another end of the polymer resin includes a functional group capable of forming an additional chemical bond. The hybrid organic/inorganic quantum dot composite is resistant to moisture and oxygen permeation, and thus, it is not degraded easily by bonding oxygen and moisture to quantum dots even if moisture and oxygen permeate into the composite. The quantum dot composite may be used as a secondary raw material capable of being processed into another form while maintaining physical properties of quantum dots as a primary raw material.

Hybrid organic/inorganic quantum dot composite and method for preparing the same

A quantum dot-polymer complex and a method for preparing the same. The quantum dot-polymer complex includes a first phase formed of a matrix resin, a globular second phase dispersed in the first phase, the second phase including a quantum dot therein, and a third phase disposed along a surface of the second phase between the first and second phases.

Method for preparing quantum dot-polymer complex, quantum dot-polymer complex, light conversion film, backlight unit and display device having the same

A light emitting device package assembly including a first substrate, a plurality of light emitting device packages disposed on the first substrate, and a light conversion member disposed on the light emitting device packages. Each of the light emitting device packages includes a main body disposed on the first substrate and including a first cavity, a light source disposed in the first cavity, and a first matrix disposed in the first cavity. Further, the light conversion member includes a second substrate including a plurality of second cavities, a second matrix disposed in the second cavities, and first light conversion particles disposed in the second matrix.

Light emitting device package assembly and method of fabricating the same

A light conversion member having excellent reliability and white balance characteristics, and a backlight unit and a display device including the same are provided. The light conversion member according to the present disclosure includes at least one light conversion layer including quantum dots and at least one band-pass filter which reduces transmittance of light having a wavelength band of 480 nm or more.

Light conversion member, and backlight unit and display device including the same

A display device includes at least one light-emitting element configured to emit blue light, a red conversion layer disposed on an upper or lower portion of the at least one light-emitting element and including a red light-emitting quantum dot, a green conversion layer disposed on the upper or lower portion of the at least one light-emitting element and including a green light-emitting phosphor, and a substrate comprising thin film transistors electrically connected to the light-emitting element.

Display device

A photo-conversion complex including at least one photo-conversion particle including a core nanocrystal, a shell nanocrystal surrounding the core nanocrystal, and a ligand bonded to the shell nanocrystal; and a protective film surrounding the photo-conversion particle.

Photo-conversion complex, and photo-conversion member, display device, and light-emitting device package including the same, and method of fabricating the same

A light conversion plate including a first glass substrate; a light conversion layer disposed on the first glass substrate and including quantum dots that convert incident light into light having a specific wavelength range; and a second glass substrate disposed on the light conversion layer. Further, a surface of at least one of the first glass substrate and the second glass substrate includes a plurality of protrusion patterns.

Light conversion plate, and light-emitting diode package, backlight unit, and display device including the plate

A backlight unit including a plurality of light sources configured to emit primary light, and a quantum dot composite. The quantum dot composite includes quantum dot phosphors excited by primary light supplied from the plurality of light sources so as to emit secondary light having a different wavelength than the primary light, and scattering particles that are configured to scatter the primary light. The scattering particles include first scattering particles, and second scattering particles different from the first scattering particles in size and composed of particles each having a diameter in the range of 5 to 50 nm.

Backlight unit and display device having the same

A light conversion film including a first barrier film, a light conversion layer disposed on the first barrier film, the light conversion layer including a matrix resin and red quantum dots that are dispersed into the matrix resin, and a second barrier film disposed on the light conversion layer. The light conversion film satisfies following Equation (1): 5&#x2266;(weight of quantum dot within light conversion layer/total weight of light conversion layer)&#xd7;100&#xd7;t&#x2266;50, where, t is a thickness of the light conversion layer.

Growing community of inventors

Seoul, South Korea

Jinwoo Sung