Samsung Electronics Co., Ltd.

Jinwoo Ahn

Juntaek Oh

Sungyoon Ryu

Youngkyu Park

Kijoo Hong

Sungil Choi

Eunsoo Hwang

Kyungbeom Kim

Yeeun Park

A method of inspecting a wafer comprising measuring an intensity of an incident light and storing the measurement as stored incident light intensity, irradiating the incident light to the wafer, measuring an intensity of a reflected light from the wafer and storing the measurement as stored reflected light intensity, and correcting the stored reflected light intensity based on a difference between the stored incident light intensity and a reference intensity of a reference incident light.

Method of inspecting a wafer and apparatus for performing the same

An inspection system includes a main support die configured to receive a target specimen; an auxiliary support die adjacent to the main support die and configured to receive a reference specimen; a cleaning device configured to remove contaminants from the reference specimen; an objective lens unit configured to direct light to main support die from a light source adjacent to the objective lens unit; a spectroscope between the objective lens unit and the light source; a detector adjacent to the objective lens unit; an imaging device between the objective lens unit and the detector; and a computer system in communication with the detector.

Inspection system including reference specimen and method of forming semiconductor device

Growing community of inventors

Yongin-si, South Korea

Jinwoo Ahn