Hewlett Packard Enterprise Development LP

Jinwon Park

Richard Stanley Williams

Frederick A Perner

Janice H Nickel

Hans S Cho

Jae Yun Yi

Jae Yeon Lee

Moonsig Joo

Kwangmyoung Rho

Jeong Hwan Kim

Jaesung Roh

Jiwon Moon

Sangmin Hwang

Jeongtae Kim

Changgoo Lee

Sung Won Chung

Choi Hyejung

Yongsun Sohn

Examples of the present disclosure include non-volatile resistive memory cells and methods of forming the same. An example of a non-volatile resistive memory cell includes a first portion of the non-volatile resistive memory cell formed as a vertically-extending structure on a first electrode, where the first portion comprises at least one memristive material across a width of the vertically-extending structure. The non-volatile resistive memory cell also includes a second portion formed as a vertically-extending memristive material structure on at least one sidewall of the first portion.

Non-volatile resistive memory cells

In one example, a three dimensional resistive memory architecture includes adjacent memory tiles with each tile including a multilevel resistive crossbar array and at least one decoder. The multilevel crossbar array includes layers of row crossbars, layers of column crossbars, and layers of resistive memory elements interposed between cross points of the row crossbars and the column crossbars, in which at least one layer of crossbars extends from a first tile through an adjacent tile and is used to address resistive memory elements in the adjacent tile. The at least one decoder underlies the multilevel resistive crossbar array and includes an address matrix comprising digital lines and analog lines, in which the digital lines select which crossbars are connected to the analog lines.

Three dimensional resistive memory architectures

Growing community of inventors

Icheon-si, South Korea

Jinwon Park