Japan Science and Technology Agency

Mitsubishi Materials Corporation

Japan Advanced Institute of Science and Technology

Jinwang Li

Tatsuya Shimoda

Satoshi Inoue

Takaaki Miyasako

Tue Trong Phan

Nobuyuki Soyama

Toshiaki Watanabe

Yuzuru Takamura

Yuki Tagashira

Reijiro Shimura

A thin film transistoraccording to the invention includes a gate electrode, a channel, and a gate insulating layerprovided between the gate electrodeand the channeland made of oxide (possibly containing inevitable impurities; this applies to oxide hereinafter) containing lanthanum and zirconium. The channelis made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.

Method for manufacturing thin film transistor with oxide semiconductor channel

The present invention comprises: a step of applying a liquid composition for forming a PZT ferroelectric film; a step of drying the film applied with the liquid composition; a step of irradiating UV rays onto the dried film at a temperature of 150 to 200&#xb0; C. in an oxygen-containing atmosphere; and after the application step, the drying step, and the UV irradiation step once, or more times, a step of firing for crystallizing a precursor film of the UV-irradiated ferroelectric film by raising a temperature with a rate of 0.5&#xb0; C./second or higher in an oxygen-containing atmosphere or by raising a temperature with a rate of 0.2&#xb0; C./second or higher in a non-oxygen containing atmosphere, followed by keeping the temperature at 400 to 500&#xb0; C. An amount of liquid composition is set such that thickness of the ferroelectric film be 150 nm or more for each application and ozone is supplied during UV irradiation.

Method for forming PZT ferroelectric film

Thin film transistor and method for manufacturing thin film transistor

The present invention provides a precursor composition for forming a conductive oxide film having high conductivity and a stable amorphous structure maintained even after heated at high temperature by a simple liquid phase process. The precursor composition of the present invention contains at least one selected from the group consisting of carboxylates, nitrates and sulfates of lanthanoids (but, except for cerium); at least one selected from the group consisting of carboxylates, nitrosyl carboxylates, nitrosyl nitrates and nitrosyl sulfates of ruthenium, iridium or rhodium; and a solvent containing at least one selected from the group consisting of carboxylic acids, alcohols and ketones.

Precursor composition and method for forming amorphous conductive oxide film

A method of forming a conductive film, comprising the steps of:

Method of forming a conductive film

Growing community of inventors

Kanazawa, Japan

Jinwang Li