Avago Technologies Fiber IP (singapore) Pte. Ltd

Agilent Technologies, Inc.

Avago Technologies General IP (singapore) Pte. Ltd.

Avago Technologies Fiber IP Pte Ltd.

Jintian Zhu

Michael Renne Ty Tan

Scott W Corzine

Michael H Leary

Chao Kun Lin

Tirumala R Ranganath

David P Bour

A vertical-cavity surface-emitting laser incorporating a supported air gap distributed Bragg reflector is disclosed. The supported air gap DBR includes a regrowth layer of material that provides mechanical support for the original material layers. The supported air gap DBR is fabricated by first growing alternating pairs of a first material and a sacrificial material over a suitable substrate. The layer pairs of the first material and sacrificial material are covered by a suitable dielectric material. The dielectric material is then selectively removed exposing regions of the first material and sacrificial material where selective regrowth of additional material is desired. The selective regrowth of the additional material provides mechanical support for the semiconductor material that remains after a selective etch removal of the sacrificial material.

Vertical-cavity surface-emitting laser including a supported airgap distributed bragg reflector

Undoped layers are introduced in the passive waveguide section of a butt-joined passive waveguide connected to an active structure. This reduces the parasitic capacitance of the structure.

Method and apparatus for a low parasitic capacitance butt-joined passive waveguide connected to an active structure

An optical modulator comprises a first waveguide layer and a barrier layer, and a quantum well layer sandwiched between the first waveguide layer and the barrier layer, where the quantum well layer has a graded composition that varies the bandgap energy of the quantum well layer between a minimum bandgap energy and the bandgap energy of at least one of the first waveguide layer and the barrier layer.

Semiconductor optical modulator having a quantum well structure for increasing effective photocurrent generating capability

A distributed Bragg reflector and a method of fabricating the same incorporates a support for supporting the gaps against collapse. The method includes forming a plurality of alternating structure and sacrificial layers on a substrate. The structure and sacrificial layers are etched into at least one mesa protruding from the substrate. A support layer is formed on the at least one mesa leaving a portion of the structure and sacrificial layers exposed. At least a portion of at least one of the exposed sacrificial layers are etched from between the structure layers to form gaps between the structure layers.

Distributed bragg reflector and method of fabrication

Semiconductor quantum well devices and methods of making the same are described. In one aspect, a device includes a quantum well structure that includes semiconductor layers defining interleaved heavy-hole and light-hole valance band quantum wells. Each of the quantum wells includes a quantum well layer interposed between barrier layers. One of the semiconductor layers that functions as a barrier layer of one of the light-hole quantum wells also functions as the quantum well layer of one of the heavy-hole quantum wells. Another of the semiconductor layers that functions as a barrier layer of one of the heavy-hole quantum wells also functions as the quantum well layer of one of the light-hole quantum wells.

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Palo Alto, CA, United States of America

Jintian Zhu