Samsung Electronics Co., Ltd.

Snu Rdb Foundation

Jinsub Park

Songkyu Kim

Sanghyun Lee

Sangmoon Lee

Euijoon Yoon

Sung Hyun Park

Yongwoon Moon

Insoo Lee

Junehee Lee

Suhan Kim

Kwangjae Woo

Yonghyeon Lee

An electronic device is provided. The electronic device includes at least one processor, wherein the at least one processor is configured to receive an RRC reconfiguration message including information related to a conditional handover from a serving cell, determine whether to perform the conditional handover, based on the information related to the conditional handover included in the RRC reconfiguration message, determine whether at least one condition for postponing a time point at which the conditional handover is performed is satisfied, based on the determination to perform the conditional handover, and postpone the time point at which the conditional handover is performed, based on satisfaction of at least some of the at least one condition. Other various embodiments are possible.

Electronic device performing handover and method for operating the same

In various embodiments, an electronic device comprising a communication circuit, a processor, and a memory is disclosed. The memory may store instructions that, when executed, cause the processor to transmit, to a network, a first session initiation protocol (SIP) invite message including at least one dummy value by using the communication circuit, obtain channel state information by using the communication circuit, determine a codec for performing a packet based call on the basis of channel state information, and transmit, to the network, a second SIP invite message including information of the determined codec by using the communication circuit. Various other embodiments are also possible which are known from the specification.

Method for controlling codec on basis of channel conditions and electronic device

A semiconductor device includes a first non-flat non-polar nitride semiconductor layer, a first structure layer on at least a portion of the surface of the first non-flat non-polar nitride semiconductor layer and a first non-polar nitride semiconductor layer on the first non-flat non-polar nitride semiconductor layer and the first structure layer. The first non-flat non-polar nitride semiconductor layer includes a plurality of solid particles.

Semiconductor devices and methods of manufacturing the same

Growing community of inventors

Suwon-si, South Korea

Jinsub Park