Samsung Electronics Co., Ltd.

Sunkyong Industries Co., Ltd.

Jinsoo Lim

Changkyu Seol

Jisung Cheon

Pilsang Yoon

Sangjun Hong

Youngdon Choi

Myoungbo Kwak

Byunggon Park

Hyejeong So

Jiyoup Kim

Daewook Kim

Jiye Noh

Hansoo Kim

Junghwan Choi

Sunil Shim

Dongjin Park

Jaehoon Jang

Wonseok Cho

Daehyun Jang

Joowon Park

Myunghoon Choi

Hong Rak Son

Jeehoon Han

Hongrak Son

Hwaseok Oh

Shinhwan Kang

Sungmin Hwang

Hun-Taek Kim

Seogoo Kang

Jaeryong Sim

Dae-Kee Kim

Sucheol Lee

Jaehun Jang

Young-Woo Kim

Jae Hun Jang

Ju-young Jung

Hyojoon Ryu

Key Hyup Kim

Jesuk Moon

Ju-Young Jung

Kiyoon Kang

Ganghyeok Kim

Jongsik Gam

Sungmi Hwang

Seonghyeong Choi

Seongyeon Woo

Namkyu Lee

Hyoungbae Ahn

An electronic device may include a reception circuit configured to generate a plurality of reception data bits based on a voltage level of an analog signal received through a link, and to generate a plurality of bit reliability values indicating probabilities of error occurrence of the plurality of reception data bits based on the voltage level of the analog signal, an alignment circuit configured to group the plurality of reception data bits into a plurality of error correction code (ECC) symbols, and to generate a plurality of symbol reliability values indicating probabilities of error occurrence of the plurality of ECC symbols based on the plurality of bit reliability values, and a decoding circuit configured to correct errors of the plurality of ECC symbols based on the plurality of symbol reliability values.

Electronic devices and methods of operating the same

Disclosed is a method of operating an electronic device which communicates with an external electronic device. The method includes loading first user data including at least one first condition bit, first valid bits, and second valid bits, generating first and second intermediate data based on the first user data with reference to a target conversion rule of a conversion table of the electronic device, which corresponds to the at least one first condition bit, a sum of a first power value corresponding to the first intermediate data and a second power value corresponding to the second intermediate data being less than or equal to a power threshold value, generating first symbol data by performing first encoding on the first intermediate data, generating second symbol data by performing second encoding on the second intermediate data, and providing first encoded data including the first symbol data and the second symbol data.

Transmitting circuit providing encoded data, electronic device including the same, and method of operating the electronic device including the same

A device includes a receiver configured to receive a plurality of Error Correction Code (ECC) codewords transmitted from an external device through a channel including one or more lanes; an ECC decoder configured to generate a plurality of post ECC codewords by performing error correction with respect to the plurality of ECC codewords and generating a first cyclic redundancy check (CRC) codeword based on the plurality of post ECC codewords; a CRC checker configured to determine whether an error exists in the first CRC codeword; and a post ECC decoder configured to, when it is determined that the error exists in the first CRC codeword, generate a second CRC codeword by estimating a remaining error position based on error correction result information received from the ECC decoder and performing remaining error correction with respect to the plurality of post ECC codewords based on the remaining error position.

Error correction device and error correction method

An integrated circuit device including a substrate having a cell and interconnection region; and a first stacked structure and a second stacked structure on the first stacked structure, each of the first and second stacked structures including insulating layers and word line structures that are alternately stacked one by one on the substrate in the cell region and the interconnection region, wherein, in the interconnection region the first stacked structure includes a first dummy channel hole penetrating through the first stacked structure, the second stacked structure includes a second dummy channel hole communicatively connected to the first dummy channel hole, the second dummy channel hole penetrating through the second stacked structure, respectively, and a first dummy upper width of an uppermost end of the first dummy channel hole is greater than a second dummy upper width of an uppermost end of the second dummy channel hole.

Integrated circuit device

An electronic device includes a memory storing data from an external source, an application processing unit (APU) transmitting a secret key and public key generation command, an isolated execution environment (IEE) generating a secret key in response to the secret key generation command, generating a public key based on the secret key in response to the public key generation command, and storing the secret key, and a non-volatile memory performing write and read operations depending on a request of the APU. When the data are stored in the memory, the APU transmits a public key request to the IEE and in response the IEE transfers the public key to the APU through a mailbox protocol. The APU generates a ciphertext by performing homomorphic encryption on the data based on an encryption key in the public key, and classifies and stores the public key and the ciphertext in the non-volatile memory.

Electronic device using homomorphic encryption and encrypted data processing method thereof

Disclosed is an electronic device, which includes an ECC decoder that performs ECC decoding on a flit including a plurality of PAM-4 symbols for each of a plurality of ECC groups, a CRC decoder that performs CRC decoding on the ECC decoded flit to obtain data, and an erasure decoding unit that calculates an LLR for each of the PAM-4 symbols when the CRC decoding fails, extracts an error symbol candidate from among the plurality of PAM-4 symbols for each of the plurality of ECC groups based on the LLR, and performs the ECC decoding again after erasing the error symbol candidate.

Error correction using PAM4 modulation

A semiconductor device includes a peripheral circuit structure; a lower stack disposed on the peripheral circuit structure and an upper stack disposed in the lower stack including a plurality of lower insulating layers and a plurality of lower word lines alternately stacked with the lower insulating layers; a plurality of channel structures extending through the lower stack and the upper stack in the cell array area; a pair of separation insulating layers extending vertically through the lower stack and the upper stack and extending in a horizontal direction, the pair of separation insulating layers being spaced apart from each other in a vertical direction; and a word line separation layer disposed at an upper portion of the lower stack and crossing the pair of separation insulating layers when viewed in a plan view, the word line separation layer extending vertically through at least one of the lower word lines.

Semiconductor device having word line separation layer

Provided is a device and method for encoding and decoding to implement maximum transition avoidance coding with minimum overhead. An exemplary device performs encoding and/or decoding, by using sub-block lookup tables representing correlations between some bit values in a data burst and symbols, a combining lookup table selectively interconnecting the sub-block lookup tables based on remaining bit values of the data burst, and a codeword decoding lookup table designating the sub-block lookup tables corresponding to the symbols of each of received codewords.

Devices and methods for encoding and decoding to implement a maximum transition avoidance coding with minimum overhead

A vertical memory device includes a gate electrode structure, channels, a charge storage structure, and a division pattern. The gate electrode includes gate electrodes spaced apart from each other in a first direction. The channel extends through the gate electrode structure, and includes a first portion and a second portion on and contacting the first portion. The second portion includes a lower surface having a width less than that of an upper surface of the first portion. The charge storage structure covers an outer sidewall of the channel. The division pattern extends between the channels in a second direction, and includes a first dummy channel and a first dummy charge storage structure covering a sidewall and a lower surface thereof. The first dummy channel includes the same material as that the channel, and the first dummy charge storage structure includes the same material as the charge storage structure.

Vertical memory devices

A semiconductor device includes: a first gate stack including a plurality of first gate electrodes; a second gate stack arranged on the first gate stack and including a plurality of second gate electrodes; and a plurality of channel structures arranged in a plurality of channel holes penetrating the first gate stack and the second gate stack. Each of the channel holes includes a first channel hole portion penetrating the first gate stack and a second channel hole portion penetrating the second gate stack, and a ratio of a second width in the second direction to a first width in the first direction of an upper end of the first channel hole portion is less than a ratio of a fourth width in the second direction to a third width in the first direction of an upper end of the second channel hole portion.

Semiconductor device and manufacturing method of the same

A storage device is provided including a memory controller having a neural processing unit (NPU); a first nonvolatile memory (NVM) connected to the memory controller through a first channel; and a second NVM connected to the memory controller through a second channel. The first NVM stores first weight data for the NPU and the second stores second weight data for the NPU. The memory controller is configured to determine one of the first and second channels that is less frequently accessed upon receiving an inference request from the neural processor, and access a corresponding one of the first weight data and the second weight data using the determined one channel.

Storage device and operating method of storage device

A storage system includes a host device and a storage device. The host device provides first input data for data storage function and second input data for artificial intelligence (AI) function. The storage device stores the first input data from the host device, and performs AI calculation based on the second input data to generate calculation result data. The storage device includes a first processor, a first nonvolatile memory, a second processor and a second nonvolatile memory. The first processor controls an operation of the storage device. The first nonvolatile memory stores the first input data. The second processor performs the AI calculation, and is distinguished from the first processor. The second nonvolatile memory stores weight data associated with the AI calculation, and is distinguished from the first nonvolatile memory.

Storage device with artificial intelligence and storage system including the same

A semiconductor device includes a peripheral circuit structure disposed on a substrate; a lower stack disposed on the peripheral circuit structure and an upper stack disposed in the lower stack, the lower stack including a plurality of lower insulating layers and a plurality of lower word lines alternately stacked with the lower insulating layers; a plurality of channel structures extending through the lower stack and the upper stack in the cell array area; a pair of separation insulating layers extending vertically through the lower stack and the upper stack and extending in a horizontal direction, the pair of separation insulating layers being spaced apart from each other in a vertical direction; and a word line separation layer disposed at an upper portion of the lower stack and crossing the pair of separation insulating layers when viewed in a plan view, the word line separation layer extending vertically through at least one of the lower word lines.

A semiconductor device including a substrate having a cell, peripheral, and boundary area; a stack structure on the cell area and including insulating and interconnection layers that are alternately stacked; a molding layer on the peripheral area boundary areas; a selection line isolation pattern extending into the stack structure; a cell channel structure passing through the stack structure; and first dummy patterns extending into the molding layer on the peripheral area, wherein upper surfaces of the first dummy patterns, an upper surface of the selection line isolation pattern, and an upper surface of the cell channel structure are coplanar, and at least one of the first dummy patterns extends in parallel with the selection line isolation pattern or cell channel structure from upper surfaces of the first dummy patterns, the upper surface of the selection line isolation pattern, and the upper surface of the cell channel structure toward the substrate.

Semiconductor devices including dummy patterns for discharging effects

Growing community of inventors

Yongin-si, South Korea

Jinsoo Lim