Samsung Electronics Co., Ltd.

Jinseok Heo

Hwiyeol Park

Jinhong Park

Hojung Yang

Kyunghoon Cho

Keunhee Bai

Heeyoung Go

Seungmin Lee

Hoon Tae Kim

Kyounghwan Kim

Jaewoo Lee

Jeongdon Ihm

Huisu Jeong

Sangjin Kim

Hoyeon Kim

Insung Kim

Seunghoon Nam

Yoo-Chang Sung

Heebom Kim

Seongchul Hong

Hojun Chang

Yigwon Kim

Suntaek Lim

Hong-Seock Choi

Disclosed is a frequency divider which includes a frequency dividing core circuit that includes a plurality of transistors and is configured to generate at least one division clock signal based on a clock signal and an inverted clock signal, a controller that is configured to generate a body bias control signal based on clock frequency information, and an adaptive body bias (ABB) generator that is configured to generate at least one body bias based on the body bias control signal and configured to apply the at least one body bias to a body of one or more of the plurality of transistors.

Frequency divider and memory device including the same

Disclosed are a system for fabricating a semiconductor device and a method of fabricating a semiconductor device. The system may include a chamber, an extreme ultraviolet (EUV) source in the chamber and configured to generate an EUV beam, an optical system on the EUV source and configured to provide the EUV beam to a substrate, a substrate stage in the chamber and configured to receive the substrate, a reticle stage in the chamber and configured to hold a reticle that is configured to project the EUV beam onto the substrate, and a particle collector between the reticle and the optical system and configured to allow for a selective transmission of the EUV beam and to remove a particle.

Fabrication system of semiconductor device and method of fabricating a semiconductor device using the same

Disclosed are photomasks, methods of fabricating the same, and methods of manufacturing semiconductor devices using the same. The photomask comprises a substrate including a pattern region and a peripheral region around the pattern region, a reflection layer on the pattern region and extending onto the peripheral region, an absorption structure on the reflection layer, and a dielectric pattern on the absorption structure on the peripheral region and exposing the absorption structure on the pattern region.

Photomask, method of fabricating the same, and method of manufacturing semiconductor device using the same

An extreme ultraviolet (EUV) exposure apparatus includes a chamber, an EUV source in the chamber and configured to generate an EUV beam, an optical system above the EUV source and configured to provide the EUV beam to a substrate, a substrate stage in the chamber and configured to receive the substrate, a reticle stage in the chamber and configured to hold a reticle that is configured to project the EUV beam onto the substrate, and a plasma source configured to provide plasma to the reticle to electrically neutralize the reticle charged by the EUV beam.

Extreme ultraviolet (EUV) exposure apparatus and method of manufacturing semiconductor device using the same

A cathode of a three-dimensional lithium secondary is defined by a sintered body including a cathode active material, in which a thickness of the sintered body is in a range of about 5 &#x3bc;m to about 30 &#x3bc;m, and an electrode density of the sintered body is in a range of about 3.7 g/cc to about 4.6 g/cc. The cathode active material may include a lithium cobalt oxide.

Cathode of three-dimensional lithium secondary battery and method of fabricating the same

A three dimensional ('3D') secondary battery includes an electrolyte layer and an anode active material layer that are sequentially stacked on a plurality of first trenches that are provided in a cathode active material layer where, in the anode active material layer, a plurality of second trenches having similar shape to that of the first trenches is provided and the plurality of second trenches are filled with an elastic member and where the elastic member absorbs expansion of the anode active material layer during charging and discharging the 3D secondary battery, and thus, the degradation of the 3-dimensional secondary battery is prevented.

Three dimensional secondary battery including elastic member and method of fabricating the same

An extreme ultraviolet generation device, including a chamber with an internal space; a plasma generator to generate plasma in the internal space; a condenser in the internal space to gather light generated from the plasma; and a monitor to monitor the internal space in an omnidirectional manner.

Extreme ultraviolet generation device and exposure system including the same

Growing community of inventors

Hwaseong-si, South Korea

Jinseok Heo