Samsung Electronics Co., Ltd.

Jinseob Kim

Wookrae Kim

Sungho Jang

Myungjun Lee

Jaehwang Jung

Jinyong Kim

Yasuhiro Hidaka

Garam Choi

Mitsunori Numata

Daehoon Han

Jungchul Lee

Minhwan Seo

Gwangsik Park

Wondon Joo

Jiyoung Chu

Janghwi Lee

Changhyeong Yoon

Younguk Jin

A semiconductor measurement apparatus includes an illumination unit including a light source and at least one illumination polarization element, a light receiving unit including at least one light-receiving polarization element disposed on a path of light reflected by a sample, and an image sensor positioned to receive light passing through the at least one light-receiving polarization element and configured to output an original image, and a control unit configured to determine, by processing the original image, a selected critical dimension among critical dimensions of a structure included in a region of the sample. The control unit is configured to obtain a plurality of sample images by selecting regions of the original image in which a peak due to interference appears, to determine a plurality of elements included in a Mueller matrix using the plurality of sample images, and to determine the selected critical dimension based on the plurality of elements.

Semiconductor measurement apparatus

A semiconductor measurement apparatus may include an illumination unit configured to irradiate light to the sample, an image sensor configured to receive light reflected from the sample and output multiple interference images representing interference patterns of polarization components of light, an optical unit in a path through which the image sensor receives light and including an objective lens above the sample, and a control unit configured to obtain, by processing the multi-interference image, measurement parameters determined from the polarization components at each of a plurality of azimuth angles defined on a plane perpendicular to a path of light incident to the image sensor. The control unit may be configured to determine a selected critical dimension to be measured from a structure in the sample based on measurement parameters. The illumination unit and/or the optical unit may include a polarizer and a compensator having a ¼ wave plate.

A semiconductor measurement device may include an illumination apparatus having a polarizer on a propagation path of light output from a light source; an optical assembly including an objective lens configured to allow light passing through the polarizer to be incident on a sample and a beam splitter configured to transmit light reflected from the sample to first and second sensors; and a controller. The controller may be configured to determine an alignment state of patterns in a first region of the sample using a first original image output by the first sensor and an alignment state of patterns in a second region of the sample using a second original image output by the second sensor. The first sensor includes a first image sensor and a self-interference generator in a path along which light is incident on the first image sensor. The second sensor includes a second image sensor.

Provided is a pupil ellipsometry measurement apparatus configured to measure an object, the pupil ellipsometry measurement apparatus including a stage configured to support the object to be measured, a light source unit configured to generate and output light, an irradiation optical system configured to focus the light from the light source unit on the object, a first detector configured to detect an image of reflected light from the object on an imaging plane, a self-interference generator (SIG) configured to generate self-interference with respect to the reflected light, a second detector configured to detect a hologram image of interference light of the SIG on a pupil plane, and a processor configured to reconstruct reflectance information based on the hologram image, and measure the object.

Pupil ellipsometry measurement apparatus and method and method of fabricating semiconductor device using the pupil ellipsometry measurement method

Provided are a diffraction-based metrology apparatus having high measurement sensitivity, a diffraction-based metrology method capable of accurately performing measurement on a semiconductor device, and a method of manufacturing a semiconductor device using the metrology method. The diffraction-based metrology apparatus includes a light source that outputs a light beam, a stage on which an object is placed, a reflective optical element that irradiates the light beam onto the object through reflection, such that the light beam is incident on the object at an inclination angle, the inclination angle being an acute angle, a detector that detects a diffracted light beam that is based on the light beam reflected and diffracted by the object and a processor that measures a 3D pupil matrix for the diffracted light beam and analyze the object based on the 3D pupil matrix.

Metrology apparatus and method based on diffraction using oblique illumination and method of manufacturing semiconductor device using the metrology method

Provided is a hyperspectral imaging (HSI) apparatus. The HSI apparatus includes: a first slit plate configured to introduce an output beam; a first aspherical mirror configured to reflect the introduced output beam; a first grating having a planar reflective surface, the first grating configured to generate a plurality of first split beams by splitting the output beam after being reflected by the first aspherical mirror; and a first camera configured to detect the plurality of first split beams.

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Incheon, South Korea

Jinseob Kim