Beijing Naura Microelectronics Equipment Co., Ltd.

Boe Technology Group Co., Ltd.

Beijing Boe Display Technology Co., Ltd.

Jinrong Zhao

Gang Wei

Song Wang

Meng Yang

Yulin Peng

Shaohua Liu

Yali Fu

Jinji Xu

Ming Wang

Jun Zhang

Jing Wang

Bin Feng

Peng Sun

Tong Wang

Henan Zhang

Mengxin Zhao

Boyu Dong

Bingliang Guo

Quanyu Shi

Shaohui Liu

Xuewei Wu

Baogang Xu

Shuo Tang

Chen Niu

Kai Chang

Shuaitao Shi

A coil structure includes a coil set including a first coil and a second coil. The first coil and the second coil are wound to form an annular area. A first end of the first coil and a first end of the second coil are close to an inner ring of the annular area. A second end of the first coil and a second end of the second coil are close to an outer ring of the annular area. The first end of the first coil is electrically connected to the first end of the second coil. A first projection-of the first coil on a plane perpendicular to an axial direction of the coil structure and a second projection of the second coil on the plane are mirror-symmetrical to each other.

Coil structure and plasma processing apparatus

The present disclosure provides a coil structure for generating plasma and semiconductor processing equipment. The coil structure includes at least one coil set. The coil set includes a first sub-coil set and a second sub-coil set that are coaxially arranged. The first sub-coil set includes at least one first planar coil located in a first plane. The second sub-coil set includes at least one second planar coil located in a second plane parallel to the first plane. The first planar coil and the second planar coil are connected in series. An orthogonal projection of the second planar coil on the first plane is mirror-symmetric or mirror-asymmetric to the first planar coil. The coil structure for generating the plasma and the semiconductor processing equipment of the present disclosure compensate for the difference in the current distribution of the coil in the radial direction.

Coil structure for generating plasma and semiconductor equipment

The present disclosure provides a liner, a reaction chamber, and a semiconductor processing device. The liner is disposed in the reaction chamber and includes a liner body being arranged around an inner side wall of the reaction chamber and is grounded; a first separator being arranged to surround a periphery of a base disposed in the reaction chamber, a lower end of the first separator being grounded through the base; a dielectric ring being arranged between an inner peripheral wall of the first separator and an outer peripheral wall of the base; and a second separator being arranged to be around a lower end of the liner body and an outer peripheral wall of the first separator. The liner provided in the present disclosure can prevent the system from generating resonance, thereby enhancing the process stability.

Liner, reaction chamber and semiconductor processing equipment

An electrostatic chuck includes a support assembly including a base, a chuck placed at the base and configured to carry a workpiece, and a fastening assembly configured to removably fix the chuck at the base.

Electrostatic chuck and semiconductor equipment

The present disclosure provides a deposition apparatus, including a first chamber, a second chamber and a third chamber. The first chamber is configured to load a substrate. The second chamber is configured to provide a high temperature environment in which a degas process and a sputtering process are performed on the substrate. The third chamber is provided between the first chamber and the second chamber. The third chamber is configured to transfer the substrate from the first chamber to the second chamber via the third chamber.

Deposition apparatus and physical vapor deposition chamber

An OLED display substrate is provided. The OLED display substrate includes a substrate, a source-drain electrode layer and a first electrode layer above the substrate, a light-emitting layer, a second electrode layer, wherein the source-drain electrode layer and the first electrode layer are at the same layer. Additionally, an OLED display panel is provided. The OLED display panel includes such OLED display substrate as well as a method for manufacturing such OLED display substrate.

OLED display substrate and manufacturing method thereof, OLED display panel

A flexible display motherboard and a manufacturing method thereof are provided. The flexible display motherboard includes a carrier substrate and a flexible display panel unit formed thereon. The flexible display panel unit includes a flexible base formed on the carrier substrate, and a display region and a periphery region which are positioned on the flexible base. A display device is formed in the display region, and the periphery region surrounds the display region. The flexible display panel unit further includes a dissolvable layer positioned between the carrier substrate and the flexible base. The dissolvable layer is formed at least in an area corresponding to the display region. The dissolvable layer is dissolvable in a solvent.

Flexible display motherboard and manufacturing method of flexible display panel

Some embodiments of the present disclosure provide a semiconductor manufacturing apparatus. The semiconductor manufacturing apparatus includes a chamber, a support and a liner. The chamber is configured for plasma processes and includes a chamber wall. The support is configured to hold a wafer in the chamber. The liner is configured to surround the support and includes a top side and a bottom side. The top side is detachably hung on the chamber wall. The bottom side includes gas passages for plasma particles to pass through the liner.

Method of operating semiconductor manufacturing apparatus and semiconductor devices

Some embodiments of the present disclosure provide a semiconductor manufacturing apparatus. The semiconductor manufacturing apparatus includes a chamber, a support and a liner. The chamber is configured for plasma processes and includes a chamber wall. The support is configured to hold a wafer in the chamber. The liner is configured to surround the support and includes a top side and a bottom side. The top side is detachably hung on the chamber wait. The bottom side includes gas passages for plasma particles to pass through the liner.

Apparatus for plasma treatment and method of operating the apparatus

Growing community of inventors

Beijing, China

Jinrong Zhao