Infineon Technologies Austria Ag

Jinming Sun

Florin Udrea

Giorgia Longobardi

Mohamed Imam

Gianluca Camuso

Alain Charles

Shu Yang

Dario Pagnano

A semiconductor device includes a type IV semiconductor base substrate, a first type III-V semiconductor layer formed on a first surface of the base substrate, and a second type III-V semiconductor layer with a different bandgap as the first type III-V being formed on the first type III-V semiconductor layer. The semiconductor device further includes first and second electrically conductive device terminals each being formed on the second type III-V semiconductor layer and each being in ohmic contact with the two-dimensional charge carrier gas. The base substrate includes a first highly doped island that is disposed directly beneath the second device terminal and extends to the first surface of the base substrate. The first highly-doped island is laterally disposed between portions of semiconductor material having a lower net doping concentration than the first highly-doped island.

High voltage blocking III-V semiconductor device

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Irvine, CA, United States of America

Jinming Sun