Chinese Academy of Sciences

Beijing Bytedance Network Technology Co., Ltd.

Jinmin Li

Xin Li

Junxi Wang

Wenhai Zhang

Hua Yang

Yan He

Zhuang Xiong

Xinliang Deng

Xiaoyan Yi

Guohong Wang

Liangchen Wang

Xiaodong Wang

Xiaoran Zhang

Long Ma

Fan Wu

Lixia Zhao

Zichao Zhou

Fuhua Yang

Qingfeng Kong

Zhongchao Fan

Jinxia Guo

Qiong Shan

Lifeng Zeng

Longkai Wen

The present disclosure provides a video processing method and apparatus, an electronic device, and a computer-readable storage medium, the video processing method includes: receiving a to-be-processed video; displaying, on a display interface, a preview image of the to-be-processed video through a video preview region, displaying an editing track of the to-be-processed video through a track editing region, and displaying at least one processing function through a processing function navigation region; and when receiving a trigger operation for any processing function, displaying, in the video preview region, a preview image of a processed video obtained by processing the any processing function, and displaying, in the track editing region, an editing identifier corresponding to the any processing function. The editing identifier and the editing track of the to-be-processed video are superimposed and displayed in the track editing region.

Video processing method and apparatus, electronic device, and computer readable storage medium

Provided are a multimedia data processing method, a multimedia data generation method, and a related device, which relate to the technical field of computers. The processing method comprises: acquiring multimedia data; displaying an editing page, wherein the editing page displays material data in the multimedia data; in response to a marking operation being carried out on at least one piece of material data, marking the at least one piece of material data; and in response to a template generation instruction, removing the marked material data from the multimedia data and generating a template.

Multimedia data processing method, multimedia data generation method, and related device

The present invention provides a method of aligning a quadrate wafer in a first photolithography process. The method includes: step A: fabricating mask aligning markers in a periphery region of a mask, which is used for a first exposure process of the quadrate wafer, around a mask pattern of the mask; step B: during the first exposure process, positioning the quadrate wafer in a preset region by using the mask aligning markers on the mask, and exposing the quadrate wafer through the mask; and step C: performing alignment for the quadrate wafer during a second exposure process and subsequent exposure processes by using aligning markers on the quadrate wafer that are obtained during the first exposure process. The method may be easily and reliably performed to ensure intact dies at periphery of a quadrate wafer to be produced and thus render increased yield of chips.

Method of aligning quadrate wafer in first photolithography process

The present disclosure relates to a light emitting diode packaging structure and the method of manufacturing the same. The light emitting diode packaging structure has an insulating substrate with through holes formed on each side of the upper surface thereof, the through hole being filled with conductive metal. Additionally, a n-type layer, an active layer, a p-type layer, an insulating layer and a p-type electrode are formed on the insulating substrate. The structure further may include a n-type electrode provided on a side of the upper surface of the n-type layer; a first back electrode provided at one side of the back surface of the insulating substrate; a second back electrode provided at the other side of back surface of the insulating substrate; and an optical element packaged on the base substrate.

Packaging structure of light emitting diode and method of manufacturing the same

The disclosure provides a system and method for multi-functional online testing of semiconductor light-emitting devices or modules. The system includes an electrical characteristic generating and testing equipment, one or more optical characteristic detecting and controlling equipments, an optical signal processing and analyzing equipment, one or more thermal characteristic detecting equipments, a central monitoring and processing computer, a multi-channel integrated drive controlling equipment, one or more multi-stress accelerated degradation controlling equipments, and one or more load boards. The present disclosure enables in-situ online monitoring and testing under accelerated degradation in a multi-stress accelerated degradation environment.

Multi-functional online testing system for semiconductor light-emitting devices or modules and method thereof

Fabrication method of GaN power LED with electrodes formed by composite optical coatings, comprising epitaxially growing N&#x2014;GaN, active, and P&#x2014;GaN layers successively on a substrate; depositing a mask layer thereon; coating the mask layer with photoresist; etching the mask layer into an N&#x2014;GaN electrode pattern; etching through that electrode pattern to form an N&#x2014;GaN electrode region; removing the mask layer and cleaning; forming a transparent, electrically conductive film simultaneously on the P&#x2014;GaN and N&#x2014;GaN layers; forming P&#x2014;GaN and N&#x2014;GaN transparent, electrically conductive electrodes by lift-off; forming bonding pad pattern for the P&#x2014;GaN and N&#x2014;GaN electrodes by photolithography process; simultaneously forming thereon bonding pad regions for the P&#x2014;GaN and N&#x2014;GaN electrodes by stepped electron beam evaporation; forming an antireflection film pattern by photolithography process; forming an antireflection film; thinning and polishing the backside of the substrate, then forming a reflector thereon; and completing the process after scribing, packaging and testing.

Fabrication method of GaN power LEDs with electrodes formed by composite optical coatings

This invention relates to a method for manufacturing a GaN based LED of a back hole structure, and the method comprises: epitaxially growing an N type GaN layer, a multi-quantum wells emitting active region and a P type GaN layer in turn on an insulation substrate made of sapphire or other materials; etching the N type GaN layer by photoetching, and forming a P type ohmic contact electrode and an N type ohmic contact electrode; scribing the chip to divide the dies on the epitaxial chip into individual die; forming a SiOinsulation isolation layer on both sides of the silicon chip, forming a metal electrode on a face side, and forming a back hole pattern on a back side; forming a back hole; forming a bump pattern for plating on the face side of the silicon chip by thick resist photoetching; forming a layer of alloy with low melting point on the back side of the silicon chip, thus forming a base; on the back side of the base, directly attaching the base to a heat sink of a housing; bonding the die with the face side of the base through the metal bumps, leading an N electrode of the LED from the metal electrode formed on the face surface of the silicon chip, and leading a P electrode of the LED from the back side of the heat sink of the housing.

Method for manufacturing a GaN based LED of a black hole structure

Growing community of inventors

Beijing, China

Jinmin Li