Kopin Corporation

Jinlin Ye

John C C Fan

Hong K Choi

Jagdish Narayan

Jyh Chia Chen

Shirong Liao

Schang-Jing Hon

Jyh-Chia Chen

Ken Fox

An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.

Efficient light emitting diodes and lasers

Compound semiconductor material is irradiated with x-ray radiation to activate a dopant material. Active carrier concentration efficiency may be improved over known methods, including conventional thermal annealing. The method may be employed for III-V group compounds, including GaN-based semiconductors, doped with p-type material to form low resistivity p-GaN. The method may be further employed to manufacture GaN-based LEDs, including blue LEDs, having improved forward bias voltage and light-emitting efficiency.

Method of manufacturing GaN-based p-type compound semiconductors and light emitting diodes

Growing community of inventors

South Easton, MA, United States of America

Jinlin Ye