Inha-industry Partnership Institute

Lg Display Co., Ltd.

Samsung Electronics Co., Ltd.

Yonsei University

Jinkyun Lee

JoonYoung Heo

JongGeun Yoon

Youngmi Kim

Yeonkyeong Lee

Soohyun Kim

Euidoo Do

Hyunwoo Kim

Cheolmin Park

Joona Bang

Chawon Koh

Tsunehiro Nishi

Seungsoo Choi

Jihoon Woo

Hyuntaek Oh

Junil Kim

Euihyuk Kim

Jiyeon Kim

Sejin Lee

A method of manufacturing a semiconductor device, the method including forming a photoresist material layer on a lower film, the photoresist material layer including a crosslinking molecule having a molecular weight of about 1,000 to about 4,000; exposing a partial region of the photoresist material layer; removing an unexposed portion of the photoresist material layer to form a photoresist pattern; and processing the lower film using the photoresist pattern, wherein the crosslinking molecule includes a perfluoro alkyl moiety, the perfluoro alkyl moiety including a carbon-fluorine bond that dissociates in response to the exposing of the partial region of the photoresist material layer.

Method of manufacturing semiconductor device

Disclosed is a graft copolymer containing a polyfluorene-based polymer as a main chain and a polyvinylidene fluoride (PVDF) as a side chain, and an element including the same. The graft copolymer contains both the polyfluorene-based polymer and the PVDF, so that the graft copolymer may increase miscibility between polymers to prepare a composite having excellent performance, prepare an uniform thin film through a solution process, and be used as a single material that exhibits both piezoelectric properties and luminescence properties.

Polyfluorene-based polymer-polyvinylidene fluoride graft copolymer and element including the same

A highly fluorinated photoresist employing a photodimerization chemistry and a method for manufacturing an organic light emitting diode display using the same. The photoresist includes a copolymer that is made from two different monomers. When the copolymer is used as a photoresist, the photoresist has the characteristic that it becomes insoluble when exposed to an ultraviolet light having a wavelength of 365 nm.

Photoresist employing photodimerization chemistry and method for manufacturing organic light emitting diode display using the same

Growing community of inventors

Incheon, South Korea

Jinkyun Lee