National Technology & Engineering Solutions of Sandia, LLC

Los Alamos National Security, LLC

Triad National Security, LLC

Jinkyoung Yoo

Roy H Olsson

Ihab Fathy El-Kady

Charles M Reinke

Brian S Swartzentruber

Collin J Delker

A semiconductor film includes a two-dimensional (2D) material layer having a hexagonal in-plane lattice structure, and a substantially planar Group IV semiconductor layer having a direct band gap on the 2D material layer. A method of fabricating a semiconductor material includes growing a Group IV semiconductor material on a two-dimensional material having a hexagonal in-plane lattice structure. This growth process results in the Group IV semiconductor material having a direct band gap. The semiconductor films may be used in any optoelectronic device, including flexible devices.

Direct band gap group IV semiconductors and methods of preparing the same

Methods and apparatus for removing heat from an object for the purpose of cooling or for the purpose of generating electrical power are disclosed. In an embodiment, at least two field-effect transistors (FETs) are operated under inversion. While the FETs are being operated, heat is conducted from the object through body portions of said FETs to an element configured for dissipating the conducted heat.

Method and apparatus of enhanced thermoelectric cooling and power conversion

Growing community of inventors

Los Alamos, NM, United States of America

Jinkyoung Yoo