Dow Global Technolgoies LLC

Molex Corporation

Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Jinjie Shi

Joseph D Comerci

Christopher John Tucker

Timothy R Gregori

Thomas H Kalantar

Hamed Lakrout

Ronald C Hodge

Narayan Ramesh

J Keith Harris

Karen Samiec

Francis J Kelley

Joseph Letizia

Xu Li

Steven J Rozeveld

James Keenihan

Abhijit A Namjoshi

John C McKeen

David J Parrillo

James R Keenihan

John C Mckeen

David Parrillo

A connecter system is configured for macro motion. Two mating terminals are configured so that during macro motion cycles, the resistance between two terminals does not substantially increase. One terminal can have multiple, somewhat spherical-shaped mating surfaces while a mating surface on the other terminal can be flat. The mating terminals can be configured to provide desirable resistance performance after more than 5000 cycles of macro motion.

System and connector configured for macro motion

A connector system is configured for macro motion. Two mating terminals are configured so that during macro motion cycles, the resistance between two terminals does not substantially increase. One terminal can have multiple, somewhat spherical-shaped mating surfaces while a mating surface on the other terminal can be flat. The mating terminals can be configured to provide desirable resistance performance after more than 5000 cycles of macro motion.

A chemical mechanical polishing composition useful for chemical mechanical polishing a semiconductor wafer containing an interconnect metal is provided, comprising, as initial components: water; an azole inhibitor; an alkali metal organic surfactant; a hydrotrope; a phosphorus containing agent; optionally, a non-saccharide water soluble polymer; optionally, a water soluble acid compound of formula I, wherein R is selected from a hydrogen and a Calkyl group, and wherein x is 1 or 2; optionally, a complexing agent; optionally, an oxidizer; optionally, an organic solvent; and, optionally, an abrasive. Also, provided is a method for making a chemical mechanical polishing composition of the present invention and a method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate is a semiconductor wafer having copper interconnects; providing a chemical mechanical polishing composition of the present invention; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate with a down force of 0.69 to 34.5 kPa; and, dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition exhibits a pH adjusted to a pH of 2 to 6 through the addition of at least one of phosphoric acid, magnesium hydroxide and lithium hydroxide.

Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition

A chemical mechanical polishing composition useful for chemical mechanical polishing a semiconductor wafer containing an interconnect metal is provided, comprising, as initial components: water; an azole inhibitor; an alkali metal organic surfactant; a hydrotrope; a phosphorus containing agent; a water soluble cellulose; optionally, a non-saccharide water soluble polymer; optionally, a water soluble acid compound of formula I, wherein R is selected from a hydrogen and a Calkyl group, and wherein x is 1 or 2; optionally, a complexing agent; optionally, an oxidizer; optionally, an organic solvent; and, optionally, an abrasive. Also, provided is a method of preparing a chemical mechanical polishing composition of the present invention and a method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate is a semiconductor wafer having copper interconnects; providing a chemical mechanical polishing composition of the present invention; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate with a down force of 0.69 to 34.5 kPa; and, dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition exhibits a pH adjusted to a pH of 2 to 6 through the addition of at least one of phosphoric acid, magnesium hydroxide and lithium hydroxide.

Stable, concentratable chemical mechanical polishing composition and methods relating thereto

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Midland, MI, United States of America

Jinjie Shi