Samsung Electronics Co., Ltd.

Jinhyung Park

Youngjun Kim

Sungwoo Kim

Hyeran Lee

Seokhyun Kim

Bongsoo Kim

Hoju Song

Daesung Cho

Hyun Mun Kim

Wooshik Kim

Il Gyu Kim

Bong-Soo Kim

Doosuk Kang

Gupil Cheong

Wookyung You

Sungjun Choi

Sang-Jun Lee

Doosu Na

Chin Woo Kim

KyoungWoo Lee

Ho-Ju Song

Seok-Hyun Kim

Kyoungpil Park

Seonghun Lim

Juyoung Jung

Heejae Yoon

Joon Young Kang

A method of manufacturing a semiconductor memory device includes forming bit line structures extending in a first horizontal direction on a substrate, and insulating spacer structures covering opposite sidewalls of each bit line structure, forming a preliminary buried contact material layer and a mold layer to respectively fill lower and upper portions of a space between a pair of insulating spacer structures, patterning the mold layer and the preliminary buried contact material layer into mold patterns spaced apart from each other in a second horizontal direction and buried contacts spaced apart from each other in the second horizontal direction, forming insulating fences among the mold patterns separated from each other and among the buried contacts separated from each other, removing the mold patterns to expose the buried contacts, and forming landing pads on the exposed buried contacts, each landing pad connected to a corresponding one of the exposed buried contacts.

Semiconductor memory device and method of manufacturing the same

An electronic device comprises: a wireless communication circuitry configured to support a Bluetooth protocol, wherein the wireless communication circuitry can be configured to: transmit an IAC-based ID packet for a communication connection with an external electronic device, receive, from the external electronic device, an FHS packet corresponding to the ID packet, identify whether an EIR field included in the FHS packet indicates the transmission of an EIR packet, identify whether a reserved field included in the FHS packet indicates the retransmission of the EIR packet based on the EIR field indicating the transmission of the EIR packet, receive the EIR packet from the external electronic device, and transmit, to the external electronic device, an ACK signal for the reception of the EIR packet in response to the reception of the EIR packet.

Electronic device for transmitting EIR packet in Bluetooth network environment, and method related thereto

A semiconductor device includes a bit line structure, first and second capping patterns, first and second contact plug structures, and a capacitor. The bit line structure extends on a cell region and a dummy region. The first capping pattern is adjacent the bit line structure on the cell region. The second capping pattern is adjacent the bit line structure on the dummy region. The first contact plug structure is adjacent the bit line structure and the first capping pattern on the cell region, and includes a lower contact plug and a first upper contact plug sequentially stacked. The second contact plug structure is adjacent the bit line structure and the second capping pattern on the dummy region, and includes a dummy lower contact plug and a second upper contact plug sequentially stacked. The capacitor contacts an upper surface of the first contact plug structure on the cell region.

Semiconductor memory devices

A semiconductor device including a transistor on a substrate; an interlayer insulating layer on the transistor; a first metal-containing layer on the interlayer insulating layer; and a second metal-containing layer on the first metal-containing layer, wherein the second metal-containing layer includes a resistor, the resistor includes a first insulating layer on the first metal-containing layer; a resistor metal layer on the first insulating layer; and a second insulating layer on the resistor metal layer, and the resistor metal layer includes a recessed side surface.

Semiconductor device

Semiconductor devices

A semiconductor memory device including: a substrate including a cell array region and a boundary region; a first recess region at an upper portion of the substrate in the cell array region; a first bit line extending onto the boundary region and crossing the first recess region; a bit line contact in the first recess region and contacting the first bit line; a second bit line spaced apart from the first recess region and adjacent to the first bit line, the second bit line crossing the cell array region and the boundary region; a cell buried insulation pattern between a side surface of the first bit line contact and an inner wall of the first recess region; and a boundary buried insulation pattern covering sidewalls of the first bit line and the second bit line in the boundary region and including a same material as the cell buried insulation pattern.

Semiconductor memory device and a method of fabricating the same

An apparatus and a method generate a coded block pattern (CBP) of an alpha channel image. An apparatus and a method encode or decode the alpha channel image using the method. The alpha channel image encoding apparatus includes a CBP generator generating a CBP of a first block corresponding to an encoding unit in the alpha channel image by allocating CBPs to a plurality of second blocks that includes the first block; and a bitstream generator generating a bitstream by encoding the CBP or the CBP and pixel values of the second blocks based on the CBP of each of second blocks.

Apparatus and method for generating coded block pattern for alpha channel image and alpha channel image encoding/decoding apparatus and method using the same

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Bucheon-si, South Korea

Jinhyung Park