Samsung Electronics Co., Ltd.

L'air Liquide,societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude

Jinhwan Lee

Jeonggil Kim

Inho Choi

Minseok Choi

Nathan Stafford

Sunghyup Kim

Ho Jun Yu

Jongbin Park

Hoyoung Jang

Changgil Son

An etching gas mixture includes a nitrogen-containing compound and an inert gas. To manufacture an integrated circuit (IC) device, a silicon-containing film on a substrate is etched by using plasma generated from the etching gas mixture, and thus a hole is formed in the silicon-containing film. The nitrogen-containing compound is selected from a compound represented by Formula 1 and a compound represented by Formula 2:(R)C≡N   [Formula 1]

Etching gas mixture and method of manufacturing integrated circuit device using the same

A pellicle for a reflective mask includes a pellicle body, a pellicle frame below the pellicle body to support the pellicle body, and a pattern structure in at least a part of a surface of the pellicle body, wherein the pattern structure includes a plurality of patterns.

Pellicle for reflective mask

An apparatus for removing residues from a source vessel in an extreme ultraviolet lithography device, the apparatus including a frame portion, and a heater structure on the frame portion, the heater structure having a head on the frame portion, the head being rotatable in at least one shaft direction, and a heater on the head to dissipate heat toward residues in the source vessel, the heater to apply temperature of 200&#xb0; C. to 800&#xb0; C.

Apparatus for removing residues from source vessel

Growing community of inventors

Yongin-si, South Korea

Jinhwan Lee