Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Korea Electronics Technology Institute

Ajou University Industry-Academic Cooperation Foundation

Jinhong Kim

Youngjin Cho

Hajin Kim

Haengdeog Koh

Minjong Bae

Hiesang Sohn

Jooho Lee

Yongsung Kim

Taehun Kim

Yongcheol Park

Jieun Kim

Hyungjun Kim

Cheheung Kim

Seyun Kim

Soichiro Mizusaki

Changsoo Lee

Doyoon Kim

Yumin Kim

Jungho Yoon

Kyuhyung Choi

Joonsung Park

Junhyuk Choi

Jinhong Park

Kichul Cho

Byongjo Hyon

Se Yun Kim

Yong-hee Cho

Dongmyoung Joo

Yongsu Noh

Minchul Kim

Seunghoon Lee

Hyun Sik Kim

Seonghun Lee

Chang Soo Lee

Joonho Park

Jindong Kim

Bongsik Kwak

Hyengcheul Choi

Sungkyu Kim

Euncheol Do

Sooyong Park

Jiwoon Park

Youmin Lee

Insoung Jung

SeokJae Oh

Bon Gwan Gu

DoYoon Kim

Donghwi Park

Yong-Hee Cho

SangWoon Lee

Jonggu Kim

Byoungho Yun

Minehul Kim

Baekhon Kim

Hyunggeol Kwak

Yuseong Jeon

Yeseul Park

Bongsung Yu

Kunwoo Choi

Eunsang Jeon

Sejun Han

Minkyu Ko

A capacitor includes a lower electrode including a perovskite material, an upper electrode spaced apart from the lower electrode, a dielectric layer positioned between the lower electrode and the upper electrode and including a perovskite material, and a passivation layer positioned between the lower electrode and the dielectric layer and including SrTiOin which a content of Ti is greater than a content of Sr.

Capacitor, method of fabricating the capacitor, and electronic device including the capacitor

A variable resistance memory device includes a variable resistance layer, a first conductive element, and a second conductive element. The variable resistance layer includes a first layer including a first material and a second layer on the first layer and the second layer including a second material. The second material has a different valence than a valence of the first material. The first conductive element and the second conductive element are on the variable resistance layer and separated from each other to form an electric current path in the variable resistance layer in a direction perpendicular to a direction in which the first layer and the second layer are stacked.

Variable resistance memory device

A capacitor includes a lower electrode layer including a first conductive layer and a second conductive layer on the first conductive layer, the second conductive layer including SnOdoped with an impurity; a dielectric layer on the second conductive layer, the dielectric layer including a rutile-phase oxide; and an upper electrode layer on the dielectric layer.

Capacitor, memory device including the capacitor

A dishwasher uses washing water containing microbubbles. The dishwasher includes a flow path forming rib that defines a washing water flow path inside an upper body and a lower body of a spray arm. The dishwasher further includes a fusion rib for fusion coupling the upper body and the lower body to effectively secure a flow path structure and simplify a fastening structure.

Dishwasher

A capacitor including a lower electrode; an upper electrode apart from the lower electrode; and a between the lower electrode and the upper electrode, the dielectric including a dielectric layer including TiO, and a leakage current reducing layer including GeOin the dielectric layer. Due to the leakage current reducing layer, a leakage current is effectively reduced while a decrease in the dielectric constant of the dielectric thin-film is small.

Capacitor and electronic device including the same

A variable resistance memory device includes a variable resistance layer and a first conductive element and a second conductive element which are spaced apart from each other on the variable resistance layer. The variable resistance layer may include a first layer and a second layer on the first layer. The first layer includes a ternary or more metal oxide containing two or more metal materials having different valences. The second layer may include silicon oxide. The variable resistance memory device may have a wide range of resistance variation due to the metal oxide in which oxygen vacancies are easily formed. The first conductive element and the second conductive element, in response to an applied voltage, may be configured to form a current path in a direction perpendicular to a direction in which the first layer and the second direction are stacked.

A heating element includes a plurality of matrix particles and a conductive inorganic filler disposed at interfaces between the plurality of matrix particles to provide a conductive network.

Heating element, manufacturing method thereof, composition for forming heating element, and heating apparatus

An example method of operating a display apparatus includes obtaining display apparatus state information indicating data processing performance of the display apparatus, transmitting the display apparatus state information to a server that provides a chat service, receiving chat messages transmitted from the server according to a message throughput determined based on the display apparatus state information, and outputting the received chat messages.

Display apparatus and operating method thereof

A nonvolatile memory device and an operating method thereof are provided. The nonvolatile memory device includes a memory cell array including first to third memory cells sequentially arranged in a vertical stack structure and a control logic configured to apply a first non-selection voltage to the first memory cell, apply a second non-selection voltage different from the first non-selection voltage to the third memory cell, apply a selection voltage to the second memory cell, and select the second memory cell as a selection memory cell.

Nonvolatile memory device and operating method of the same

A water softener for a dishwasher includes a tank body having a regeneration tank that accommodates brine, an exchange tank that accommodates an ion exchange resin, and a flow path configured to supply water to the regeneration tank and the exchange tank. The water softener further includes a regeneration inlet in communication with the regeneration tank, an exchange inlet in communication with the exchange tank, and a switching valve mounted at the tank body and configured to open and close the regeneration inlet and the exchange inlet to switch the flow path. The switching valve includes a head configured to open and close the regeneration inlet and the exchange inlet. A sealing protrusion protrudes toward the head from a circumference of the regeneration inlet and is configured to contact the head to seal the regeneration inlet.

Dish washer and water softener for dish washer

A memory device may include an insulating structure including a first surface and a protrusion portion protruding from the first surface in a first direction, a recording material layer on the insulating structure and extending along a protruding surface of the protrusion portion to cover the protrusion portion and extending onto the first surface of the insulating structure, a channel layer on the recording material layer and extending along a surface of the recording material layer, a gate insulating layer on the channel layer; and a gate electrode formed on the gate insulating layer at a location facing a second surface of the insulating structure. The second surface of the insulating structure may be a protruding upper surface of the protrusion portion.

Memory device and method of manufacturing the same

A vertical nonvolatile memory device including a memory cell string using a resistance change material is disclosed. Each memory cell string of the nonvolatile memory device includes a semiconductor layer extending in a first direction and having a first surface opposite a second surface, a plurality of gates and a plurality of insulators alternately arranged in the first direction and extending in a second direction perpendicular to the first direction, a gate insulating layer extending in the first direction between the plurality of gates and the semiconductor layer and between the plurality of insulators and the semiconductor layer, and a dielectric film extending in the first direction on the surface of the semiconductor layer and having a plurality of movable oxygen vacancies distributed therein.

Vertical nonvolatile memory device including memory cell string

A variable resistance memory may include first and second conductive elements spaced apart from each other on a variable resistance layer. The variable resistance layer may include first to third oxide layers sequentially arranged in a direction perpendicular to a direction in which the first and second conductive elements are arranged. A dielectric constant of the second oxide layer may be greater than dielectric constants of the first and third oxide layers.

The present specification relates to a wireless power receiving device, receiving method, and receiving system, the device comprising individual rectifiers for each receiving coil, wherein the individual rectifiers comprise isolators for isolating a receiving coil for PC0 from a receiving coil for PC1.

Low power- and medium power-compatible wireless charging receiving device and method

A thermoelectric composite includes: a first layer including a thermoelectric semiconductor material; and a second layer including a conductive inorganic filler, wherein the first and second layers are stacked in layered form constituting a superlattice structure.

Thermoelectric composite, and thermoelectric element and device including the same

Growing community of inventors

Seoul, South Korea

Jinhong Kim