Yangtze Memory Technologies Co., Ltd.

JinHao Li

Qiguang Wang

Hao Pu

Xiao Hou

Xianchun Deng

FeiFei Tu

Three-dimensional (3D) NAND memory devices and methods are provided. In one aspect, a fabrication method includes forming a dielectric stack over a substrate, forming a functional layer and a semiconductor channel through the dielectric stack, forming a conductor/insulator stack based on the dielectric stack, and forming memory cells through the conductor/insulator stack. Each memory cell includes a portion of the functional layer and the semiconductor channel. At least one of the functional layer and the semiconductor channel includes a certain amount of deuterium elements.

Three-dimensional memory device and fabrication method for enhanced reliability

According to an aspect of the disclosure, a method of controlling bow of a substrate is provided. In the method, a substrate is provided on which a dielectric layer is formed. The substrate has a bow with respect to a reference plane. The bow of the substrate is adjusted by performing an annealing process on the substrate. The annealing process includes one of a first process condition and a second process condition. The first process condition induces a tensile stress on the substrate to cause the substrate to bow upward with respect to the reference plane. The second process condition induces a compressive stress on the substrate to cause the substrate to bow downward with respect to the reference plane.

Growing community of inventors

Wuhan, China

JinHao Li