Innoscience (suzhou) Technology Co., Ltd.

Innoscience (suzhou) Semiconductor Co., Ltd.

Jingyu Shen

Qiyue Zhao

Chunhua Zhou

Chao Yang

Baoli Wei

Yong Liu

Wuhao Gao

Weigang Yao

Yu Shi

A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a third nitride-based semiconductor layer, a passivation layer, a gate insulator layer, and a gate electrode. The first nitride-based semiconductor layer includes at least two doped barrier regions defining an aperture between the doped barrier regions. The second nitride-based semiconductor layer is disposed over first nitride-based semiconductor layer. The third nitride-based semiconductor layer is disposed on the second nitride-based semiconductor layer and has a bandgap higher than a bandgap of the second nitride-based semiconductor layer. The passivation layer is disposed over the third nitride-based semiconductor layer, in which a vertical projection of the passivation layer on the first nitride-based semiconductor layer is spaced apart from the aperture. The gate insulator layer is disposed over the third nitride-based semiconductor layer. The gate electrode is disposed over the gate insulator layer and aligns with the aperture.

Nitride-based semiconductor device and method for manufacturing the same

Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a gate electrode, a first electrode, a first via and a second via. The substrate has a first surface and a second surface. The first nitride semiconductor layer is disposed on the first surface of the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap exceeding that of the first nitride semiconductor layer. The gate electrode and the first electrode are disposed on the second nitride semiconductor layer. The first via extends from the second surface and is electrically connected to the first electrode. The second via extends from the second surface. The depth of the first via is different from the depth of the second via.

Semiconductor device structures and methods of manufacturing the same

A flip-chip semiconductor package with improved heat dissipation capability and low package profile is provided. The package comprises a heat sink having a plurality of heat dissipation fins and a plurality of heat dissipation leads. The heat dissipation leads are connected to a plurality of thermally conductive vias of a substrate so as to provide thermal conductivity path from the heatsink to the substrate as well as support the heatsink to relieve compressive stress applied to a semiconductor die by the heatsink. The package further comprises an encapsulation layer configured to cover the heat dissipation leads of the heat sink and expose the heat dissipation fins of the heat sink.

Semiconductor package and method for manufacturing the same

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Suzhou, China

Jingyu Shen