Boe Technology Group Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Jingwen Feng

Yichi Zhang

Yang Liu

Xuyong Yang

Haiqiao Ye

Fan Cao

Maocheng Jiang

A blue top emitting quantum dot light-emitting device and a display apparatus are disclosed. The blue top emitting quantum dot light-emitting device includes: a cathode and an anode oppositely arranged, a blue quantum dot light-emitting layer between the cathode and the anode, an electron transport layer between the cathode and the blue quantum dot light-emitting layer, and a hole transport layer between the blue quantum dot light-emitting layer and the anode; where: a material of the blue quantum dot light-emitting layer is ZnSe:Te/ZnSe/ZnS, ZnSe:Temeans that a molar ratio of Se to Te is 1-:x, and x is 0.03 to 0.07; a thickness of the hole transport layer is 10 nm to 35 nm, a thickness of the electron transport layer is 25 nm to 50 nm, and a sum of thicknesses of the hole transport layer and the electron transport layer is 55 nm to 65 nm.

Blue top emitting quantum dot light-emitting device and display apparatus

The present invention provides QLED devices, hole transport materials and producing methods thereof, and display devices. A hole transport material includes a polymer, wherein the polymer is a single nanoparticle including at least a first metal compound and a second metal compound, the first metal compound and the second metal compound are linked via a covalent bond or a Van der Waals force, and valence band energy levels of the first metal compound and the second metal compound are different.

QLED devices, hole transport materials and producing methods thereof, and display devices

The present disclosure provides a quantum dot light-emitting device, a preparing method and a display device. The quantum dot light-emitting device includes an anode, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode laminated one on another. The quantum dot light-emitting layer includes heterodimer quantum dots, the heterodimer quantum dots include first quantum dots carrying a positive charge and second quantum dots carrying a negative charge, and each first quantum dot and each second quantum dot have a same energy gap and different positions of conduction band and valence band.

Quantum dot light-emitting device, preparing method and display device

The present disclosure provides a quantum dot light emitting diode, including: a first electrode, a second electrode, a quantum dot light emitting layer between the first electrode and the second electrode, at least one electron transport layer between the quantum dot light emitting layer and the first electrode, and an electron contribution layer between the electron transport layer of the at least one electron transport layer closest to the first electrode and the quantum dot light emitting layer; a material of the electron contribution layer includes a metal material. The embodiment of the present disclosure also provides a method for manufacturing the quantum dot light emitting diode and a display panel.

Quantum dot light emitting diode, manufacturing method thereof and display panel with electron contribution layer for injecting free electrons to light emitting layer

The disclosure provides a quantum dot structure, a manufacturing method thereof, and a quantum dot light-emitting device. The quantum dot structure includes a core structure and a shell layer. The core structure includes a first metal element, at least one second metal element, and a non-metal element that bind through a chemical bond. The first metal element is a group III element, the non-metal element is a group V element, and the second metal element is a metal element different from the first metal element. In an inside-to-outside direction of the core structure, the content of the first metal element is in a descending order, the sum of content of the second metal element is in an ascending order, and the size of an optical band gap of the core structure is in the ascending order.

Growing community of inventors

Beijing, China

Jingwen Feng