Stats Chippac Pte. Ltd.

JinGwan Kim

JiHoon Oh

KyuWon Lee

SinJae Lee

SunYoung Chun

HyunSu Shin

Hun Jeong

JaeHyun Lim

JongVin Park

Jaehyun Lim

Hyunil Bae

MoonKi Jeong

A semiconductor device has an interconnect structure with a cavity formed partially through the interconnect structure. A first semiconductor die is mounted in the cavity. A first TSV is formed through the first semiconductor die. An adhesive layer is deposited over the interconnect structure and first semiconductor die. A shielding layer is mounted over the first semiconductor die. The shielding layer is secured to the first semiconductor die with the adhesive layer and grounded through the first TSV and interconnect structure to block electromagnetic interference. A second semiconductor die is mounted to the shielding layer and electrically connected to the interconnect structure. A second TSV is formed through the second semiconductor die. An encapsulant is deposited over the shielding layer, second semiconductor die, and interconnect structure. A slot is formed through the shielding layer for the encapsulant to flow into the cavity and cover the first semiconductor die.

Semiconductor device and method of forming a shielding layer over a semiconductor die disposed in a cavity of an interconnect structure and grounded through the die TSV

A semiconductor device is made by forming a heat spreader over a carrier. A semiconductor die is mounted over the heat spreader with a first surface oriented toward the heat spreader. A first insulating layer is formed over the semiconductor die and heat spreader. A via is formed in the first insulating layer. A first conductive layer is formed over the first insulating layer and connected to the heat spreader through the via and to contact pads on the semiconductor die. The heat spreader extends from the first surface of the semiconductor die to the via. A second insulating layer is formed over the first conductive layer. A second conductive layer is electrically connected to the first conductive layer. The carrier is removed. The heat spreader dissipates heat from the semiconductor die and provides shielding from inter-device interference. The heat spreader is grounded through the first conductive layer.

Semiconductor device and method of mounting semiconductor die to heat spreader on temporary carrier and forming polymer layer and conductive layer over the die

A semiconductor device has a substrate with a die attach area. A conductive layer is formed over a surface of the substrate and extending below the surface. An insulating layer is formed over the surface of the substrate outside the die attach area. A portion of the conductive layer is removed within the die attach area to expose sidewalls of the substrate. The remaining portion of the conductive layer is recessed below the surface of the substrate within the die attach area. A semiconductor die has bumps formed over its active surface. The semiconductor die is mounted to the substrate by bonding the bumps to the remaining portion of the first conductive layer recessed below the first surface of the substrate. The sidewalls of the substrate retain the bumps during bonding to the remaining portion of the conductive layer. An encapsulant is deposited between the semiconductor die and substrate.

Semiconductor device and method of forming partially-etched conductive layer recessed within substrate for bonding to semiconductor die

A Fo-WLCSP has a first polymer layer formed around a semiconductor die. First conductive vias are formed through the first polymer layer around a perimeter of the semiconductor die. A first interconnect structure is formed over a first surface of the first polymer layer and electrically connected to the first conductive vias. The first interconnect structure has a second polymer layer and a plurality of second vias formed through the second polymer layer. A second interconnect structure is formed over a second surface of the first polymer layer and electrically connected to the first conductive vias. The second interconnect structure has a third polymer layer and a plurality of third vias formed through the third polymer layer. A semiconductor package can be mounted to the WLCSP in a PoP arrangement. The semiconductor package is electrically connected to the WLCSP through the first interconnect structure or second interconnect structure.

Semiconductor device and method of forming Fo-WLCSP having conductive layers and conductive vias separated by polymer layers

Semiconductor device with partially-etched conductive layer recessed within substrate for bonding to semiconductor die

A method of manufacture of an integrated circuit packaging system includes: providing a base carrier having a base carrier hole from a base carrier interconnection side to a base carrier device side; mounting a base integrated circuit over the base carrier; forming an encapsulation over the base carrier covering the base integrated circuit, the encapsulation having an encapsulation top side and having an encapsulation hole directly over the base carrier hole; and forming an interconnection structure as a single integral structure through the base carrier hole and the encapsulation hole, the interconnection structure directly on the encapsulation top side and directly on the base carrier interconnection side.

Integrated circuit packaging system with vertical interconnects and method of manufacture thereof

A method of manufacture of an integrated circuit packaging system includes: providing a base substrate having a base substrate top side; mounting a base integrated circuit over the base substrate top side, the base integrated circuit having an active side opposite an inactive side with the inactive side facing the base substrate top side; attaching a peripheral interconnect to the base substrate top side and a device peripheral pad of the base integrated circuit at the active side; mounting an interposer over the base integrated circuit and the peripheral interconnect, the interposer having an interposer top side and a window; and attaching a central interconnect to the interposer top side and a device central pad of the base integrated circuit at the active side, the central interconnect through the window.

Integrated circuit packaging system with package-on-package and method of manufacture thereof

A method of manufacture of an integrated circuit packaging system includes: providing a package carrier; mounting an integrated circuit device to the package carrier; mounting an embeddable conductive structure, having a non-horizontal portion between a lower portion and an elevated portion and a hole, to the integrated circuit device with the lower portion over the integrated circuit device; mounting an interposer to the lower portion and below the elevated portion; and forming an encapsulation having a recess exposing the interposer and the elevated portion.

Integrated circuit packaging system with embedded conductive structure and method of manufacture thereof

Method of forming partially-etched conductive layer recessed within substrate for bonding to semiconductor die

An integrated circuit package stacking system includes: forming a flexible substrate by: providing an insulating material, forming a stacking pad on the insulating material, forming a coupling pad on the insulating material, and forming a trace between the stacking pad and the coupling pad; providing a package substrate; coupling an integrated circuit to the package substrate; and applying a conductive adhesive on the package substrate for positioning the flexible substrate over the integrated circuit and coupling the flexible substrate on the conductive adhesive.

Integrated circuit package stacking system

A semiconductor device is made by forming a heat spreader over a temporary carrier. A semiconductor die is mounted to the heat spreader. A first polymer layer is formed over the semiconductor die and heat spreader. A first conductive layer is formed over the first polymer layer. The first conductive layer is connected to the heat spreader and contact pads on the semiconductor die. A second polymer layer is formed over the first conductive layer. A second conductive layer is formed over the second polymer layer. The second conductive layer is electrically connected to the first conductive layer. Bumps are formed through a solder masking layer on the second conductive layer. The temporary carrier is removed. The heat spreader dissipates heat from the semiconductor die and provides shielding from inter-device interference. The heat spreader is grounded through the first and second conductive layers.

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Seoul, South Korea

JinGwan Kim