National University of Singapore

Seagate Technology Incorporated

Agency for Science, Technology and Research

Globalfoundries Singapore Pte. Ltd.

Jingsheng Chen

Liang Liu

Ganping Ju

Yingguo Peng

Jinyu Deng

Jian-Ping Wang

Francis YongWee Poh

Danny PakChum Shum

Shaohai Chen

Kaifeng Dong

Huihui Li

Chenghang Zhou

A spin-orbit torque device is described. The spin-orbit torque device comprising an interfacing layer and a magnetic layer having a switchable magnetization direction. An interface is formed between the interfacing layer and the magnetic layer, the interface having a 3m1 crystallographic point group symmetry adapted to interact with an electric current to generate a spin torque for switching the magnetization direction of the magnetic layer. A method for fabricating the spin-orbit device and a method for switching the switchable magnetization of a spin-orbit torque device are also described.

Spin-orbit torque device, method for fabricating a spin-orbit torque device and method for switching a switchable magnetization of a spin-orbit torque device

In one example embodiment, a SOT-MRAM includes a storage unit having a CoXPtbased free layer. The storage unit includes a bottom electrode and the CoXPtbased free layer is disposed over the bottom electrode. Further, the storage unit includes a tunnel barrier layer over the CoXPtbased free layer, and a fixed layer over the tunnel barrier layer. The CoXPtbased free layer, tunnel barrier layer and fixed layer form a magnetic tunnel junction. The storage unit may also include a top electrode over the MTJ.

Spin orbit torque magnetic random access memory structures and methods for fabrication

In one embodiment, a SOT device provides current-induced perpendicular magnetization switching in a single magnetic layer, such as a L1-ordered magnetic alloy layer of FePt alloy, CoPt alloy, FePd alloy or another atomically layered magnetic alloy. The SOT may originate from the large spin orbit coupling in these alloys. Depending on the implementation, the SOT device may take the form of a SOT-MRAM, a spin memristor, a current-assisted magnetic recording media, or other type of device.

Spin orbit torque-based spintronic devices using L1-ordered alloys

Magnetic tunnel junction (MTJ) structures, spin transfer torque magnetic random access memory (STT MRAM) structures, and methods for fabricating integrated circuits including such structures are provided. In an embodiment, an MTJ structure includes a cobalt iron carbon (CoFeC) fixed reference layer. Further, the MTJ structure includes a cobalt iron carbon (CoFeC) free storage layer. Also, the MTJ structure includes a tunnel barrier layer between the fixed reference layer and the free storage layer.

MTJ structures, STT MRAM structures, and methods for fabricating integrated circuits including the same

A stack includes a substrate, a magnetic recording layer having a columnar structure, and an interlayer disposed between the substrate and the magnetic recording layer. The columnar structure includes magnetic grains separated by a crystalline segregant or a combination of crystalline and amorphous segregants.

Magnetic stack including crystallized segregant induced columnar magnetic recording layer

A magnetic stack includes a substrate, a magnetic recording layer, and a TiN&#x2014;X layer disposed between the substrate and the magnetic recording layer. In the TiN&#x2014;X layer, X is a dopant comprising at least one of MgO, TiO, TiO, ZrN, ZrO, ZrO, HfN, HfO, AlN, and AlO.

Magnetic stack including TiN-X intermediate layer

A method and apparatus for forming a thin film magnetic recording media, the method comprises generating magnetic nanoclusters from a target of magnetic material, crystallizing the magnetic nanoclusters, and depositing the magnetic nanoclusters onto a substrate to form a thin film of magnetic particles thereon. The magnetic nanoclusters are deposited onto the substrate after crystallized and therefore after the deposition. The apparatus comprises a first chamber, a second chamber connected to the first chamber, and a third chamber connected to the second chamber. The first chamber has a source for generating magnetic nanoclusters. The second chamber is to receive the magnetic nanoclusters and crystallize the magnetic nanocluster. The third chamber is to receive the crystallized magnetic nanoclusters from the second chamber and deposit the crystallized magnetic nanoclusters onto the substrate positioned therein.

Growing community of inventors

Singapore, Singapore

Jingsheng Chen