Kaistar Lighting (xiamen) Co., Ltd.

Bridgelux Incorporated

Bridgelux Optoelectronics (xiamen) Co., Ltd.

Kaister Lighting (xiamen) Co., Ltd.

Jingqiong Zhang

Tzuchi Cheng

Jungang Zhao

Yi-Qun Li

Yiqun Li

Shanshan Yang

Changwen Liao

Jinqiang Huang

Yl-Qun Li

A red-light emitting device comprising: a blue LED chip; and a photoluminescence material comprising a narrowband red fluoride phosphor and a broadband red phosphor. The narrowband red phosphor may comprise a manganese-activated fluoride phosphor of composition KSiF:Mn, KGeF:Mn, and KTiF:Mn.

Phosphor-converted red LEDs and color-tunable multi-LED packaged light emitting devices

LED package

A lighting device comprising: a first LED having a wavelength of maximum emission intensity from 620 nm to 640 nm; a second LED having a wavelength of maximum emission intensity from 500 nm to 565 nm; a third LED having a wavelength of maximum emission intensity from 430 nm to 480 nm; and a fourth LED for generating light comprising a CCT in a range from 1800K to 5000K. The first LED comprises a Phosphor-Converted LED comprising a first LED chip having a maximum emission intensity wavelength from 400 nm to 480 nm, and a narrowband red phosphor with a FWHM less than 55 nm. Light generated by the device comprises a combination of light generated by the first, second, third, and fourth LEDs and a CCT of light generated by the device is tunable by independently controlling power to the first, second, third, and fourth LEDs.

Phosphor-converted red LEDs and color-tunable multi-LED lighting devices

A light-emitting diode (LED) and a backlight-type display device are provided. The light-emitting diode includes: a multi-color light emitting chip, an emission spectrum thereof including a first peak in a wavelength range of a first primary-color light and a second peak in a wavelength range of a second primary-color light, and an absolute value of a wavelength difference between the first and second peaks being greater than 50 nm; and a phosphor-containing layer, disposed over the multi-color light emitting chip and used to be excited to emit a third primary-color light. Owing to the LED adopts the multi-color light emitting chip which has the first and second peaks in different wavelength ranges and the absolute valve of the wavelength difference is greater than 50 nm, RGB three-primary-color lights can be outputted by adopting a single-color light phosphor powder with relatively high reliability. The backlight-type display device can obtain a high NTSC level.

Light-emitting diode adopting a multi-color light emitting chip and backlight-type display device including the light-emitting diode

A surface mounted type leadframe includes a conductive base and an insulating material layer. The conductive base includes at least three connecting pads spaced apart from each other. First surface of the connecting pads are configured to form die bonding regions, and second surfaces of the connecting pads opposite to the first surfaces are configured to form soldering regions. The insulating material layer at least partially covers the first surfaces, surrounds the die bonding regions, and is filled in a gap between each two adjacent connecting pads. A photoelectric device with multi-chips adopting the surface mounted type leadframe is also provided.

Surface mounted type leadframe and photoelectric device with multi-chips

A LED leadframe for securing a LED chip includes a metallic base and an insulating layer. The metallic base includes a die bonding region and a peripheral region surrounding the die bonding region, and the die bonding region is for securing the LED chip. The insulating layer is disposed on the metallic base and located in the peripheral region to define the die bonding region. The insulating layer includes a bar-shaped insulating section disposed in the metallic base and corresponding to the die bonding region. The metallic base includes a first groove(s) defined corresponding to the die bonding region. The first groove(s) is/are filled with a thermally conductive filler. The invention improves the LED leadframe to allow heat conducting efficiencies of various regions of the base to be controllable and adjustable so as to reduce temperature differences among various regions of the base and thereby unify the temperature.

Light emitting device and leadframe thereof

The present disclosure provides a LED metal substrate and a LED module. An insulator is provided to cover an electrode or a side surface of a metal layer in the LED metal substrate, or provided on an original creepage path between the electrode and the metal layer in the LED metal substrate to form a new creepage path with increased creepage distance, in order to increase the breakdown voltage between the electrode and the metal layer. It is possible to avoid a phenomenon that an electric arc is generated between the electrode and the metal layer when a relative high voltage applied by the electrode during a breakdown test. So that the breakdown voltage of the LED metal substrate with an insulator reaches higher than that of a LED metal substrate without the insulator in the same dimension, and a technical problem in the art may be solved.

LED metal substrate and LED module

The present disclosure provides a LED package structure and a LED light-emitting device. The LED package structure comprises a LED chip and a wavelength converting layer covering the LED chip. The wavelength converting layer contains red phosphor, which has lower amount in edge portion than in center portion. It is possible to avoid direct or indirect excitation for generating red light in edge portion of the LED chip by adjusting the amount of red phosphor in edge portion to be lower, so that the color temperature in edge portion may be adjusted toward to high color temperature, and thus the phenomenon of yellow halo may be alleviated.

Growing community of inventors

Xiamen, China

Jingqiong Zhang