Polyera Corporation

Jingqi Wang

Antonio Facchetti

Chun Huang

William Christopher Sheets

Chung-Chin Hsiao

Shaofeng Lu

Yu Xia

Hakan Usta

Christopher Newman

Daniel Batzel

Minhuei Wang

Don Frye

Jing Chen

The present teachings provide a coating composition (a passivation formulation) for preparing a coating material in a metal oxide thin film transistor, where the coating material comprises a polymer blend including a polymer and a stabilizing agent. Incorporation of a stabilizing agent according to the present teachings in the coating material can lead to improved device performance of the metal oxide thin film transistor, in particular, reduced shift in the threshold voltage and long-term bias-stress stability.

Coating materials for oxide thin film transistors

Disclosed are new compounds having semiconducting properties. Such compounds can be processed into thin film semiconductors that exhibit high carrier mobility and/or good current modulation characteristics.

Compounds having semiconducting properties and related compositions and devices

Disclosed are polysulfone-based materials that can be used as active and/or passive components in various electronic, optical, and optoelectronic devices, particularly, metal-oxide-semiconductor field-effect transistors. For example, various metal-oxide-semiconductor field-effect transistors can include a dielectric layer and/or a passivation layer prepared from such polysulfone-based materials and exhibit good device performance.

Polymeric materials for use in metal-oxide-semiconductor field-effect transistors

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Evanston, IL, United States of America

Jingqi Wang