United Microelectronics Corp.

Jingling Wang

Ching Hwa Tey

Guohai Zhang

Ji Feng

Yunfei Li

A method of forming a semiconductor device includes following steps. Firstly, a substrate is provided and the substrate has a first semiconductor layer formed thereon. Next, an isolating structure is formed in the first semiconductor layer, and a sacrificial layer is formed on the first semiconductor layer by consuming a top portion of the first semiconductor layer. Then, the sacrificial layer is removed to form a second semiconductor layer, and a portion of the isolating structure is also removed to form a shallow trench isolation (STI), with a top surface of the shallow trench isolation being substantially coplanar with a top surface of the second semiconductor layer.

Growing community of inventors

Singapore, Singapore

Jingling Wang